1SS300 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit: mm Small package : SC-70 Low forward voltage : V = 0.92V (typ.) F (3) Fa ..
1SS301 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit: mm Small package : SC-70 Low forward voltage : V = 0.92 V (typ.) F (3)Fa ..
1SS302 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit: mm Small package : SC-70 Low forward voltage : V = 0.90V (typ.) F (3)Fas ..
1SS302TE85L , TOSHIBA Diode Silicon Epitaxial Planar Type
1SS303 ,Switching diodeFEATURESPACKAGE DIMENSIONS (Unit: mm)• Low capacitance: Ct = 2.5 pF TYP.• High speed switching: trr ..
1SS303-T1 ,Switching diodeapplications including switching, limitter, clipper.1.25±0.1• Double diode configuration assures ec ..
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
2560A , Pulse Dialer
1SS300
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications
1SS300 TOSHIBA Diode Silicon Epitaxial Planar Type
1SS300 Ultra High Speed Switching Applications Small package : SC-70 Low forward voltage : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)
Maximum Ratings (Ta = 25°C) *: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C) Weight: 0.006g
Unit: mm
