1SS272 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mmUltra High Speed Switching Appl ..
1SS293 ,Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching1SS293 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS293 Unit: mmLow Voltage High Spe ..
1SS294 ,SCHOTTKY BARRIER RECTIFIERS1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mmLow Voltage High Spe ..
1SS295 ,DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF BAND MIXER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNIT
Forwardvo1tagelv ..
1SS300 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit: mm Small package : SC-70 Low forward voltage : V = 0.92V (typ.) F (3) Fa ..
1SS301 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit: mm Small package : SC-70 Low forward voltage : V = 0.92 V (typ.) F (3)Fa ..
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
2560A , Pulse Dialer
1SS272
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
1SS272
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS272 Ultra High Speed Switching Application Small package : SC-61 Low forward voltage : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)
Maximum Ratings (Ta = 25��� �C)
(*) Unit rating. Total rating = Unit rating × 1.5.
Electrical Characteristics (Ta = 25��� �C)
Marking Weight: 0.013g
Unit: mm
