1SS250 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS250 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS250 Unit: mm Ultra High Speed Switching App ..
1SS265 , 150mW 35 Volt Band Switching Diode
1SS268 ,DIODE VHF TUNER BAND SWITCH APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNIT
Forwardvo1tagelv ..
1SS269 ,DIODE VHF TUNER BAND SWITCH APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNIT
Forwardvo1tagelv ..
1SS271 ,DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE VHF~UHF MIXER APPLICATIONELECTRICAL CHARACTERISTICS (Ta = 25°C)Reversevo1tagelvRlm=10pAl6l-l-lv
ReversecurrentlmlvR=5vl-l-l ..
1SS272 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mmUltra High Speed Switching Appl ..
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
2560A , Pulse Dialer
1SS250
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
1SS250
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS250 Ultra High Speed Switching Application Low forward voltage : VF (2) = 0.90V (typ.) Fast reverse recovery time : trr = 60ns (typ.) Small total capacitance : CT = 1.5pF (typ.) Small package : SC−59
Maximum Ratings (Ta = 25��� �C)
Electrical Characteristics (Ta = 25��� �C)
VF (1)
Fig.1 Reverse recovery time (trr) test circuit Marking Weight: 0.012g
Unit: mm
