1SS223 ,Silicon switching diodeELECTRICAL CHARACTERISTICS (Ta=25 °c)
CHARACTERISTIC SYMBOL TEST CONDITIONS
|F=10 mA
IF=50 m ..
1SS223-T1B ,Silicon switching diodeapplications including switching, iimitter, clipper.
0.65ttls
0-4i3:3a
ABSOLUTE MAXIMUM RA ..
1SS223-T2B ,Silicon switching diodeFEATURES
PACKAGE DIMENSIONS
in millimeters _
O Low capacitance: Ct=4.0 pF MAX.
0 High speed ..
1SS226 ,SWITCHING DIODES1SS226 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS226 Unit: mmUltra High Speed Switching Appl ..
1SS226T5LFT , Ultra High Speed Switching Application
1SS244 , 300mW Switching Diode 250 Volts
2501N , Dual N-Channel 2.5V Specified PowerTrench MOSFET
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
2560A , Pulse Dialer
1SS222-1SS222-T1B-1SS223-1SS223-T1B-1SS223-T2B
