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1SS221 ,Silicon switching diodeDATA SHEET
SILICON SWITCHING DIODES
1 SS220,133221
HIGH SPEED SWITCHING
SILICON EPITAXIAL D ..
1SS221-T1B ,Silicon switching diodeDATA SHEET
SILICON SWITCHING DIODES
1 SS220,133221
HIGH SPEED SWITCHING
SILICON EPITAXIAL D ..
1SS222 ,Silicon switching diodeELECTRICAL CHARACTERISTICS (Ta=25 °c)
CHARACTERISTIC SYMBOL TEST CONDITIONS
|F=10 mA
IF=50 m ..
1SS222-T1B ,Silicon switching diodeDATA SHEET
SILICON SWITCHING DIODES
1 SS222,1 SS223
HIGH SPEED SWITCHING
SILICON EPITAXIA ..
1SS223 ,Silicon switching diodeELECTRICAL CHARACTERISTICS (Ta=25 °c)
CHARACTERISTIC SYMBOL TEST CONDITIONS
|F=10 mA
IF=50 m ..
1SS223-T1B ,Silicon switching diodeapplications including switching, iimitter, clipper.
0.65ttls
0-4i3:3a
ABSOLUTE MAXIMUM RA ..
2501N , Dual N-Channel 2.5V Specified PowerTrench MOSFET
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
2560A , Pulse Dialer
1SS220-1SS220-L-1SS220-T1B-1SS220-T2B-1SS221-1SS221-T1B