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1SS196 TOSHIBA N/a391avaiSWITCHING DIODES


1SS196 ,SWITCHING DIODES1SS196 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Unit: mmUltra High Speed Switching Appl ..
1SS198 , Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
1SS198 , Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
1SS200 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS200 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Unit: mmUltra High Speed Switching Appl ..
1SS200 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS200 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Unit: mmUltra High Speed Switching Appl ..
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1SS196
SWITCHING DIODES
1SS196
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS196

Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)
Maximum Ratings (Ta = 25�
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Electrical Characteristics (Ta = 25�
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Marking

Weight: 0.012g
Unit: mm
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