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1PS79SB30
Schottky barrier single diode
1PS79SB30
Schottky barrier single diode24 July 2012 Product data sheet Product profile
1.1 General descriptionPlanar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small Surface-Mounted Device (SMD) plasticpackage.
1.2 Features and benefits Very low forward voltage• Very low reverse current• Guard ring protected• Ultra small SMD package• AEC-Q101 qualified
1.3 Applications Ultra high-speed switching• Voltage clamping• Blocking diodes
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit forward current - - 200 mA reverse voltage - - 40 V forward voltage IF = 10 mA; Tamb = 25 °C - 320 360 mV
Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol K cathode[1] A anode 21
aaa-003679 A
NXP Semiconductors 1PS79SB30
Schottky barrier single diode Ordering information
Table 3. Ordering information
PackageType number
Name Description Version1PS79SB30 SOD523 plastic surface-mounted package; 2 leads SOD523
Marking
Table 4. Marking codes
Type number Marking code1PS79SB30 G1
Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit reverse voltage - 40 V forward current - 200 mA
IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 - 300 mA
IFSM non-repetitive peak forwardcurrent tp = 8.3 ms; Tj(init) = 25 °C; half sine
wave 1 A junction temperature - 150 °C
Tamb ambient temperature -65 150 °C
Tstg storage temperature -65 150 °C
Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max UnitRth(j-a) thermal resistance
from junction toambient
in free air [1] - - 450 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standardfootprint.
NXP Semiconductors 1PS79SB30
Schottky barrier single diode Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max UnitIF = 0.1 mA; Tamb = 25 °C - 190 220 mV
IF = 1 mA; Tamb = 25 °C - 250 290 mV
IF = 10 mA; Tamb = 25 °C - 320 360 mV
IF = 100 mA; Tamb = 25 °C - 440 500 mV forward voltage
IF = 200 mA; Tamb = 25 °C - 520 600 mV reverse current VR = 25 V; Tamb = 25 °C; pulsed;
tp = 300 µs; δ = 0.02 - 0.5 µA diode capacitance f = 1 MHz; Tamb = 25 °C; VR = 1 V - - 20 pF
mld546
(1) (3)(V)(mA)
(2)
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
mld54720100 VR(V)(µA)
(1)
(2)
(3)
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
NXP Semiconductors 1PS79SB30
Schottky barrier single diodemld548 VR(V)(pF) 20 40
f = 1 MHz; Tamb = 25 °C
Fig. 3. Diode capacitance as a function of reverse voltage; typical values Test information
8.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and issuitable for use in automotive applications.
Package outline1.651.55 1.251.15
0.650.580.850.75
NXP Semiconductors 1PS79SB30
Schottky barrier single diode
10. Soldering
Footprint information for reflow soldering of plastic surface-mounted, 2 leads package SOD523
sod523_froccupied area
solder land
solder resist
solder land plus solder paste
solder paste deposit
Dimensions in mm
0.6(2×)0.5(2×)
0.4(2×)0.5(2×)
Fig. 5. Reflow soldering footprint for SOD523 (SOD523)
11. Revision history
Table 8. Revision history
NXP Semiconductors 1PS79SB30
Schottky barrier single diode
12. Legal information
12.1 Data sheet status
Documentstatus [1][2] Productstatus [3] DefinitionObjective[short] datasheet
Development This document contains data fromthe objective specification for productdevelopment.
Preliminary[short] datasheet
Qualification This document contains data from thepreliminary specification.
Product[short] datasheet
Production This document contains the productspecification.
[1] Please consult the most recently issued document before initiating orcompleting a design.[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may havechanged since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://.
12.2 Definitions
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Limited warranty and liability — Information in this document is believedto be accurate and reliable. However, NXP Semiconductors does not giveany representations or warranties, expressed or implied, as to the accuracyor completeness of such information and shall have no liability for theconsequences of use of such information. NXP Semiconductors takes noresponsibility for the content in this document if provided by an informationsource outside of NXP Semiconductors.
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Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.
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Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.
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