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Partno	Mfg	Dc	Qty	Available	Descript
1PS79SB17	PHILIPS	N/a	30000	avai	4 V, 30 mA low C_d Schottky barrier diode

1PS79SB17 ,4 V, 30 mA low C_d Schottky barrier diodeapplications:◆ Diode ring mixer◆ RF detector◆ RF voltage doubler1.4 Quick reference dataTable 2: Qu ..
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1PS79SB17
4 V, 30 mA low C_d Schottky barrier diode
Product proﬁle1.1 General description
Planar low capacitance Schottky barrier diode encapsulated in a very small SMD plastic
package.
1.2 Features Very low diode capacitance Very low forward voltage Very small SMD plastic packages
1.3 Applications Digital applications: Ultra high-speed switching Clamping circuits. RF applications: Diode ring mixer RF detector RF voltage doubler
1.4 Quick reference data
1PSxSB17
4 V, 30 mA low Cd Schottky barrier diode
Table 1: Product overview
1PS66SB17 SOT666 - triple isolated diode
1PS76SB17 SOD323 SC-76 single diode
1PS79SB17 SOD523 SC-79 single diode
Table 2: Quick reference data continuous forward current - - 30 mA continuous reverse voltage - - 4 V diode capacitance - 0.8 1 pF
Philips Semiconductors 1PSxSB17 Pinning information
[1] The marking bar indicates the cathode. Ordering information Marking Limiting values
Table 3: Pinning
SOD323 (SC-76); SOD523 (SC-79) cathode [1] anode
SOT666 anode (diode 1) anode (diode 2) anode (diode 3) cathode (diode 3) cathode (diode 2) cathode (diode 1)
001aab540
sym001 356 6
sym046
Table 4: Ordering information
1PS66SB17 - plastic surface mounted package; 6 leads SOT666
1PS76SB17 SC-76 plastic surface mounted package; 2 leads SOD323
1PS79SB17 SC-79 plastic surface mounted package; 2 leads SOD523
Table 5: Marking codes
1PS66SB17 N2
1PS76SB17 S7
1PS79SB17 T2
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). continuous reverse voltage - 4 V continuous forward current - 30 mA
Philips Semiconductors 1PSxSB17 Thermal characteristics
[1] For Schottky barrier diodes, thermal run-away has to be considered as in some applications the reverse
power losses PR are a signiﬁcant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating will be available on request.
[2] Refer to SOD323 (SC-76) standard mounting conditions.
[3] Refer to SOD523 (SC-79) standard mounting conditions.
[4] Refer to SOT666 standard mounting conditions. Characteristics
[1] Pulse test: tp≤ 300μs;δ≤ 0.02. junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6: Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 7: Thermal characteristics
Rth(j-a) thermal resistance from junction to
ambient;
in free air [1]
SOD323 [2]- - 450 K/W
SOD523 [3]- - 450 K/W
SOT666 [4]- - 700 K/W
Table 8: Characteristics
Tamb =25 °C unless otherwise speciﬁed. forward voltage see Figure1; [1]= 0.1 mA - 300 350 mV= 1 mA - 360 450 mV= 10 mA - 470 600 mV reverse current VR = 3 V; see Figure2 - - 250 nA diode
capacitance
see Figure3;
VR = 0 V; f = 1 MHz - 0.8 1 pF= 0.5V;f=1 MHz - 0.65 - pF
Philips Semiconductors 1PSxSB17
Philips Semiconductors 1PSxSB17 Package outline Packing information
[1] For further information and the availability of packing methods, see Section14.
Table 9: Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
1PS66SB17 SOT666 4 mm pitch, 8 mm tape and reel - -115 -
1PS76SB17 SOD323 4 mm pitch, 8 mm tape and reel -115 -135
1PS79SB17 SOD523 4 mm pitch, 8 mm tape and reel -115 -135
Philips Semiconductors 1PSxSB17
10. Revision history
Table 10: Revision history
1PSXSB17_6 20050404 Product data sheet - 9397 750 14587 1PS76SB17_1
PS79SB17_5
Modiﬁcations: • Type number 1PS66SB17 added
1PS76SB17_1PS79SB17_5 20041028 Product data sheet - 9397 750 13733 1PS76SB17_4
1PS76SB17_4 20040126 Product data sheet - 9397 750 12618 1PS76SB17_3
1PS76SB17_3 20020809 Product data sheet - 9397 750 10174 1PS76SB17_2
1PS76SB17_2 19990525 Preliminary data sheet- 9397 750 05893 1PS76SB17_1
1PS76SB17_1 19961014 Preliminary data sheet- 9397 750 01342-

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