1N5711 ,Schottky Barrier Diodes for General Purpose Applications1N5711®SMALL SIGNAL SCHOTTKY DIODEDESCRIPTIONMetal to silicon junction diode featuring high break-d ..
1N5711 ,Schottky Barrier Diodes for General Purpose ApplicationsApplicationsTechnical Data1N57111N57125082-2300 Series5082-2800 Series5082-2900
1N5711 ,Schottky Barrier Diodes for General Purpose Applications1N5711®SMALL SIGNAL SCHOTTKY DIODEDESCRIPTIONMetal to silicon junction diode featuring high break-d ..
1N5712 ,Schottky Barrier Diodes for General Purpose ApplicationsCharacteristicsOutline 15Lead Material ............................................................ ..
1N5806 ,Conductor Products, Inc. - HIGH EFFICIENCY, ESP,K 2.5 AMP TO 20 AMP
1N5806 ,Conductor Products, Inc. - HIGH EFFICIENCY, ESP,K 2.5 AMP TO 20 AMP
24C04 ,4KbitSerialI2CBusEEPROMwithUser-DefinedBlockWriteProtectionST24C04, ST25C04 ST24W04, ST25W0424 Kbit Serial I C Bus EEPROMwith User-Defined Block Write Protect ..
24C04. ,4KbitSerialI2CBusEEPROMwithUser-DefinedBlockWriteProtectionLogic DiagramSELF TIMED PROGRAMMING CYCLEAUTOMATIC ADDRESS INCREMENTINGENHANCED ESD/LATCH UPPERFORM ..
24C04A , The FT24C04A/08A/16A series are 4096/8192/16384 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 512/1024/2048 words of 8 bits (1 byte) each.
24C05LN ,4K-Bit Standard 2-Wire Bus Interface Serial EEPROMFeaturesThe NM24C04/05 devices are 4096 bits of CMOS non-volatile Extended operating voltage 2.7V ..
24C08 ,8K/16K5.0VI2COSerialEEPROMsST24C08, ST25C08 ST24W08, ST25W0828 Kbit Serial I C Bus EEPROMwith User-Defined Block Write Protect ..
24C08A ,2-Wire Serial EEPROMFeatures• Write Protect Pin for Hardware Data Protection – Utilizes Different Array Protection Comp ..
1N5711
Schottky Barrier Diodes for General Purpose Applications
1N5711SMALL SIGNAL SCHOTTKY DIODE
ABSOLUTE RATINGS (limiting values)
THERMAL RESISTANCE* On infinite heatsink with 4mm lead length Pulse test: tp≤ 300μsδ<2%.
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICSDYNAMIC CHARACTERISTICS
Metalto silicon junction diode featuring high break-
down, low turn-on voltage and ultrafast switching.
Primarly intended for high level UHF/VHF detec-
tion and pulse application with broad dynamic
range. Matched batches are available on request
DESCRIPTION
1N5711
Fig.1: Forward current versus forward voltageat
low level (typical values).
Fig.2: CapacitanceC versus reverse applied
voltage VR (typical values).
Fig.3: Reverse current versus ambient tempera-
ture.
Fig.4: Reverse current versus continuous reverse
voltage (typical values).
1N5711Cooling method : by convection and conduction
Marking: clear, ring at cathode end.
Weight: 0.15g
PACKAGE MECHANICAL DATADO-35
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