1N5400 ,3.0 AMP SILICON RECTIFIERS
1N5401 ,3.0 AMP SILICON RECTIFIERSFeatures• Plastic package has Underwriters Laboratories 1.0 (25.4)Flammability Classification 94V-0 ..
1N5401RLG , Axial−Lead Standard Recovery Rectifiers
1N5402 ,3.0 AMP SILICON RECTIFIERSElectrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.* Maximum ..
1N5402RL ,3A 200V Standard Recovery RectifierFeatures• High Current to Small SizeSTANDARD RECOVERY• High Surge Current CapabilityRECTIFIERS• Low ..
1N5402RLG , Axial−Lead Standard Recovery Rectifiers
24C04 ,4KbitSerialI2CBusEEPROMwithUser-DefinedBlockWriteProtectionST24C04, ST25C04 ST24W04, ST25W0424 Kbit Serial I C Bus EEPROMwith User-Defined Block Write Protect ..
24C04. ,4KbitSerialI2CBusEEPROMwithUser-DefinedBlockWriteProtectionLogic DiagramSELF TIMED PROGRAMMING CYCLEAUTOMATIC ADDRESS INCREMENTINGENHANCED ESD/LATCH UPPERFORM ..
24C04A , The FT24C04A/08A/16A series are 4096/8192/16384 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 512/1024/2048 words of 8 bits (1 byte) each.
24C05LN ,4K-Bit Standard 2-Wire Bus Interface Serial EEPROMFeaturesThe NM24C04/05 devices are 4096 bits of CMOS non-volatile Extended operating voltage 2.7V ..
24C08 ,8K/16K5.0VI2COSerialEEPROMsST24C08, ST25C08 ST24W08, ST25W0828 Kbit Serial I C Bus EEPROMwith User-Defined Block Write Protect ..
24C08A ,2-Wire Serial EEPROMFeatures• Write Protect Pin for Hardware Data Protection – Utilizes Different Array Protection Comp ..
1N5400
3.0 AMP SILICON RECTIFIERS
1N5400-1N5408 1N5400 - 1N5408 Features • 3.0 ampere operation at T = 75°C A with no thermal runaway. • High current capability. • Low leakage. DO-201AD COLOR BAND DENOTES CATHODE General Purpose Rectifiers Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units 5400 5401 5402 5403 5404 5405 5406 5407 5408 V Maximum Repetitive Reverse 50 100 200 300 400 500 600 800 1000 V RRM Voltage I Average Rectified Forward Current, 3.0 A F(AV) .375 " lead length @ T = 75°C A I Non-repetitive Peak Forward Surge FSM Current 200 A 8.3 ms Single Half-Sine-Wave Storage Temperature Range -55 to +150 T °C stg T Operating Junction Temperature -55 to +150 °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 6.25 W D Thermal Resistance, Junction to Ambient 20 R °C/W θJA Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Device Units 5400 5401 5402 5403 5404 5405 5406 5407 5408 V Forward Voltage @ 3.0 A 1.2 V F I Maximum Full Load Reverse rr 0.5 mA Current, Full Cycle T = 105°C A I Reverse Current @ rated V R R 5.0 μA T = 25°C A 500 μA T = 100°C A C Toatal Capacitance T 30 pF V = 4.0 V, f = 1.0 MHz R 2001 1N5400-1N5408, Rev. C
