1N5282 ,Small Signal Diode1N52821N5282DO-35Color Band Denotes CathodeSmall Signal DiodeAbsolute Maximum Ratings* T = 25° ..
1N5297 ,Leaded Current Limiting Diode JEDEC
1N5301 ,Leaded Current Limiting Diode JEDEC
1N5314 ,Leaded Current Limiting Diode JEDEC
1N5333B ,5 Watt Surmetic 40 Silicon Zener Diodes
1N5333B ,5 Watt Surmetic 40 Silicon Zener DiodesELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 1.2 V Max @ I = 1.0 A for all type ..
24A16 , 1K/2K/4K/8K/16K-bit Serial EEPROM for Low Power
24A16 , 1K/2K/4K/8K/16K-bit Serial EEPROM for Low Power
24AA01I/SN , 1K/2K 1.8V I 2 C O Serial EEPROMs
24AA01-I/SN , 1K/2K 1.8V I 2 C O Serial EEPROMs
24AA02/SN , 1K/2K 1.8V I 2 C O Serial EEPROMs
24AA02/SN , 1K/2K 1.8V I 2 C O Serial EEPROMs
1N5282
Small Signal Diode
1N5282 1N5282 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 80 V RRM I Average Rectified Forward Current 200 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 4.0 A Storage Temperature Range -65 to +200 T °C stg Operating Junction Temperature 175 T °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 500 mW D R Thermal Resistance, Junction to Ambient 300 C/W ° θJA Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Test Conditions Min Max Units V Breakdown Voltage I = 5 A 80 V R μ R V Forward Voltage I = 0.1 mA 0.45 0.49 V F F I = 1.0 mA 0.55 0.60 V F I = 10 mA 0.67 0.725 V F I = 100 mA 0.80 0.90 V F I = 300 mA 0.92 1.1 V F I = 500 mA 1.05 1.3 V F I Reverse Current V = 55 V 100 nA R R 100 V = 55 V, T = 150°C μA R A C Total Capacitance V = 0, f = 1.0 MHz 2.5 pF T R t Reverse Recovery Time 4 ns I = I = 10 mA, R = 100 Ω rr1 F R L I = 1.0mA rr t Reverse Recovery Time 4 ns I = I = 200 mA, R = 100 Ω rr2 F R L I = 20mA rr 2002 1N5282, Rev. A
