1N4938 ,200 V, 250 mW silicon diode 1N49381N4938DO-35Color Band Denotes CathodeSmall Signal DiodeAbsolute Maximum Ratings * T = 25°C ..
1N4944 , FAST SWITCHING PLASTIC RECTIFIER(VOLTAGE - 200 to 1000 Volts CURRENT - 1.0 Ampere)
1N4958 , Axial Leaded, Hermetically Sealed, 5 WATT Voltage Regulators
1N5059 ,Leaded Rectifier General Purposeapplications. All operating parameters must be validated for each customer application by the custo ..
1N5059 ,Leaded Rectifier General PurposeElectrical CharacteristicsT = 25 °C, unless otherwise specified ambParameter Test condition Sub typ ..
1N5059GP ,GLASS PASSIVATED JUNCTION RECTIFIERFeaturesDia.• Plastic package has Underwriters Laboratories DO-204AC (DO-15)Flammability Classifica ..
245602620000829H+ , 0.4 Series 5602 mmPitch
245NQ015 ,15V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplicationsV @ 240 Apk, T = 75°C 0.34 V Ultra low forward voltage dropF JHigh frequency operationT ..
24A16 , 1K/2K/4K/8K/16K-bit Serial EEPROM for Low Power
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24AA01I/SN , 1K/2K 1.8V I 2 C O Serial EEPROMs
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1N4938
High Conductance Fast Diode
1N4938 1N4938 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings * T = 25°C unless otherwise noted A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 200 V RRM I Average Rectified Forward Current 500 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 4.0 A T Storage Temperature Range -65 to +200 °C STG T Operating Junction Temperature 175 °C J * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 500 mW D R Thermal Resistance, Junction to Ambient 300 °C/W θJA Electrical Characteristics T =25°C unless otherwise noted A Symbol Parameter Test Conditions Min. Max. Units V Breakdown Voltage I = 100μA 200 V R R V Forward Voltage I = 100mA 1.0 V F F I Reverse Leakage V = 75V 100 nA R R V = 175V, T = 175°C 100 μA R A C Total Capacitance V = 0V, f = 1MHz 5 pF T R t Reverse Recovery Time I = 3mA, I = 30mA 50 ns rr F R I = 1mA, R = 100Ω rr L ©2004 1N4938, Rev. A1
