1N4936 ,400 V, 1 A fast silicon rectifier diode
1N4936 ,400 V, 1 A fast silicon rectifier diode
1N4936 ,400 V, 1 A fast silicon rectifier diode21N4933, 1N4934, 1N4935, 1N4936, 1N4937ORDERING INFORMATION†Device Package Shipping1N4933 Axial Lea ..
1N4936 ,400 V, 1 A fast silicon rectifier diode
1N4936RL ,1A 400V Fast-Recovery RectifierELECTRICAL CHARACTERISTICSCharacteristic Symbol Min Typ Max UnitInstantaneous Forward Voltage v − 1 ..
1N4937 ,1.0 AMP FAST RECOVERY RECTIFIERSmaximum ratings. This implyingduring start–up, the power MOSFET is not allowed to turnthe need of d ..
2450AT45A100E , High Frequency Ceramic Solutions
2450BM15A0002E , High Frequency Ceramic Solutions
245602620000829H+ , 0.4 Series 5602 mmPitch
245NQ015 ,15V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplicationsV @ 240 Apk, T = 75°C 0.34 V Ultra low forward voltage dropF JHigh frequency operationT ..
24A16 , 1K/2K/4K/8K/16K-bit Serial EEPROM for Low Power
24A16 , 1K/2K/4K/8K/16K-bit Serial EEPROM for Low Power
1N4936
400 V, 1 A fast silicon rectifier diode
1N4933-1N4937 1N4933 - 1N4937 Features • Low forward voltage drop. • High surge current capability. • High reliability. DO-41 • High current capability. COLOR BAND DENOTES CATHODE Fast Rectifiers Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units 4933 4934 4935 4936 4937 V Maximum Repetitive Reverse Voltage 50 100 200 400 600 V RRM I Average Rectified Forward Current, F(AV) 1.0 A .375 " lead length @ T = 50°C A I Non-repetitive Peak Forward Surge Current FSM 30 A 8.3 ms Single Half-Sine-Wave Storage Temperature Range -50 to +150 °C T stg T Operating Junction Temperature -50 to +150 °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 2.5 W D R Thermal Resistance, Junction to Ambient 50 °C/W θJA Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Device Units 4933 4934 4935 4936 4937 V Forward Voltage @ 1.0 A 1.2 V F t Reverse Recovery Time rr 150 ns I = 0.5 A, I = 1.0 A, I = 0.25 A F R rr I 5.0 Reverse Current @ rated V T = 25°C μA R R A 100 μA T = 125°C A C Total Capacitance T 12 pF V = 4.0 V, f = 1.0 MHz R 2001 1N4933-1N4937, Rev. C
