1N485B ,Leaded Silicon Diode General Purpose1N485B1N485BDO-35Color Band Denotes CathodeSmall Signal DiodeAbsolute Maximum Ratings* T = 25° ..
1N4933 ,50 V, 1 A fast silicon rectifier diodeMAXIMUM RATINGS (Note 1)Rating Symbol 1N4933 1N4934 1N4935 1N4936 1N4937 Unit*Peak Repetitive Rever ..
1N4934 ,100 V, 1 A fast silicon rectifier diode27-Feb-02 11N4933 thru 1N4937Vishay Semiconductorsformerly General SemiconductorRatings and Charact ..
1N4934 ,100 V, 1 A fast silicon rectifier diode
1N4935 ,200 V, 1 A fast silicon rectifier diodeFeatures50−600 VOLTS• Shipped in plastic bags, 1000 per bag• Available Tape and Reeled, 5000 per re ..
1N4935GP ,200 V, 1 A glass passivated fast recovery rectifierFeatures Plastic package has Underwriters Laboratories Flammability Classification 94V-01.0 (25.4) ..
2450AT45A100E , High Frequency Ceramic Solutions
2450BM15A0002E , High Frequency Ceramic Solutions
245602620000829H+ , 0.4 Series 5602 mmPitch
245NQ015 ,15V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplicationsV @ 240 Apk, T = 75°C 0.34 V Ultra low forward voltage dropF JHigh frequency operationT ..
24A16 , 1K/2K/4K/8K/16K-bit Serial EEPROM for Low Power
24A16 , 1K/2K/4K/8K/16K-bit Serial EEPROM for Low Power
1N485B
General Purpose Low Leakage Diode
1N485B 1N485B DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 200 V RRM I Average Rectified Forward Current 200 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 4.0 A Storage Temperature Range -65 to +200 T °C stg Operating Junction Temperature 175 T °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 500 mW D Thermal Resistance, Junction to Ambient 300 R °C/W θJA Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Test Conditions Min Max Units V Breakdown Voltage 200 V R I = 5 μA R V Forward Voltage I = 100 mA 1.0 V F F I Reverse Current V = 175 V 25 nA R R 5 V = 175 V, T = 150°C μA R A 2003 1N485B, Rev. A
