1N483B ,GENERAL PURPOSE SILICON DIODES1N483B Small Signal DiodeJanuary 20051N483B Small Signal DiodeDO-35Color Band Denotes CathodeAbsol ..
1N4849 ,Conductor Products, Inc. - Diode
1N484B ,General purpose low leakage diode. Working inverse voltage 130V.ELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6)
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1N485B ,Leaded Silicon Diode General Purpose1N485B1N485BDO-35Color Band Denotes CathodeSmall Signal DiodeAbsolute Maximum Ratings* T = 25° ..
1N4933 ,50 V, 1 A fast silicon rectifier diodeMAXIMUM RATINGS (Note 1)Rating Symbol 1N4933 1N4934 1N4935 1N4936 1N4937 Unit*Peak Repetitive Rever ..
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2450AT45A100E , High Frequency Ceramic Solutions
2450BM15A0002E , High Frequency Ceramic Solutions
245602620000829H+ , 0.4 Series 5602 mmPitch
245NQ015 ,15V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplicationsV @ 240 Apk, T = 75°C 0.34 V Ultra low forward voltage dropF JHigh frequency operationT ..
24A16 , 1K/2K/4K/8K/16K-bit Serial EEPROM for Low Power
24A16 , 1K/2K/4K/8K/16K-bit Serial EEPROM for Low Power
1N483B
Small Signal Diode
1N483B Small Signal Diode January 2005 1N483B Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T = 25°C unless otherwise noted a Symbol Parameter Value Unit V Maximum Repetitive Reverse Voltage 80 V RRM I Average Rectified Forward Current 200 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 4.0 A T Storage Temperature Range -65 to +200 °C STG T Operating Junction Temperature 175 °C J * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Unit P Power Dissipation 500 mW D R Thermal Resistance, Junction to Ambient 300 °C/W θJA Electrical Characteristics T = 25°C unless otherwise noted C Symbol Parameter Conditions Min. Max Units V Breakdown Voltage I = 100μA80 V R R V Forward Voltage I = 100mA 1.0 V F F I Reverse Leakage V = 60V 25 nA R R V = 60V, T = 150°C 5 μA R A ©2005 1 1N483B Rev. A
