1N4731A ,4.3 V, 1 W silicon zener diode
1N4732A ,4.7 V, 1 W silicon zener diodeFeatures • Silicon Planar Power Zener Diodes For use in stabilizing and clipping circuits with hi ..
1N4733 ,5.1 V, 1 W silicon zener diodeFAIRCHILD SEMICONDUCTOR ELI PEIBHEHE'?” DDE'éI-IBE Cl I
3469674 FAIRCHILD SEMICONDUCTOR 840 2748 ..
1N4733A ,5.1 V, 1 W silicon zener diodeFeatures:• Complete Voltage Range — 1.8 to 200 Volts• DO-204AH Package — Smaller than Conventional ..
1N4734 ,5.6 V, 1 W silicon zener diodeELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)
PACKAGES
1N4151
1 ..
1N4734 ,5.6 V, 1 W silicon zener diodeFAIRCHILD SEMICONDUCTOR ELI PEIBHEHE'?” DDE'éI-IBE Cl I
3469674 FAIRCHILD SEMICONDUCTOR 840 2748 ..
2-406549-4 , INVERTED MODULAR JACK ASSEMBLY, 1X1, SHIELDED, PANEL GROUND, LED
240NQ045 ,45V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplications are in switching power supplies, converters, free-waveformwheeling diodes, and reverse ..
241NQ045 ,45V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
241NQ050 ,SCHOTTKY RECTIFIERapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
243NQ080 ,80V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
24400 , METRIC STANDOFFS AND SPACERS
1N4731A
4.3 V, 1 W silicon zener diode
Zeners (1N4728A - 1N4752A) Zeners 1N4728A - 1N4752A Absolute Maximum Ratings* T = 25°C unless otherwise noted A Tolerance: A = 5% Symbol Parameter Value Units P Power Dissipation 1.0 W D Derate above 50°C 6.67 mW/°C T Storage Temperature Range -65 to +200 °C STG T Operating Junction Temperature + 200 °C J R Thermal resistance Junction to Lead 53.5 °C/W θJL Thermal resistance Junction to Ambient 100 R °C/W θJA Lead Temperature (1/16” from case for 10 + 230 °C seconds) Surge Power** 10 W DO-41 *These ratings are limiting values above which the serviceability of the diode may be impaired. COLOR BAND DENOTES CATHODE **Non-recurrent square wave PW = 8.3 ms, TA = 55 degrees C. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T = 25°C unless otherwise noted A Z @ Z @ I V I I V I I Z ZK @ R Z ZT ZK R SURGE ZM Device (V) (Ω Ω Ω Ω) (mA) (Ω Ω Ω Ω) (mA) (V) (μ μ μ μA) (mA) (mA) 1N4728A 3.3 10 76 400 1.0 1.0 100 1380 276 1N4729A 3.6 10 69 400 1.0 1.0 100 1260 252 1N4730A 3.9 9.0 64 400 1.0 1.0 50 1190 234 1N4731A 4.3 9.0 58 400 1.0 1.0 10 1070 217 1N4732A 4.7 8.0 53 500 1.0 1.0 10 970 193 1N4733A 5.1 7.0 49 550 1.0 1.0 10 890 178 1N4734A 5.6 5.0 45 600 1.0 2.0 10 810 162 1N4735A 6.2 2.0 41 700 1.0 3.0 10 730 146 1N4736A 6.8 3.5 37 700 1.0 4.0 10 660 133 1N4737A 7.5 4.0 34 700 0.5 5.0 10 605 121 1N4738A 8.2 4.5 31 700 0.5 6.0 10 550 110 1N4739A 9.1 5.0 28 700 0.5 7.0 10 500 100 1N4740A 10 7.0 25 700 0.25 7.6 10 454 91 1N4741A 11 8.0 23 700 0.25 8.4 5.0 414 83 1N4742A 12 9.0 21 700 0.25 9.1 5.0 380 76 1N4743A 13 10 19 700 0.25 9.9 5.0 344 69 1N4744A 15 14 17 700 0.25 11.4 5.0 304 61 1N4745A 16 16 15.5 700 0.25 12.2 5.0 285 57 1N4746A 18 20 14 750 0.25 13.7 5.0 250 50 1N4747A 20 22 12.5 750 0.25 15.2 5.0 225 45 1N4748A 22 23 11.5 750 0.25 16.7 5.0 205 41 1N4749A 24 25 10.5 750 0.25 18.2 5.0 190 38 1N4750A 27 35 9.5 750 0.25 20.6 5.0 170 34 1N4751A 30 40 8.5 1000 0.25 22.8 5.0 150 30 1N4752A 33 45 7.5 1000 0.25 25.1 5.0 135 27 V Forward Voltage = 1.2 V Maximum @ I = 200 mA for all 1N4700 series F F 2001 1N4700A Rev. C
