1N459ATR ,High Conductance Low Leakage Diodeapplications involving pulsed or low duty cycle operations.Thermal CharacteristicsSymbol Parameter ..
1N4607 ,Signal or Computer DiodeAPPLICATIONS.Unit in mm26.0MIN.MAXIMUM RATINGS (Ta=25° C)Maximum (Peak) Reverse VoltageReverse Volt ..
1N4607 ,Signal or Computer DiodeTOSHIBA f1)TScREiTlr/0P'l'01 E? os:llllmvrizso f3lillyhy35 D r-_--'- - -e- -xi _ tff " SI EDit iat. ..
1N4620 ,Conductor Products, Inc. - 400 MILLIWATT HERMETICALLY SEALED GLASS SILICON ZENER DIODES
1N4626 ,Conductor Products, Inc. - 400 MILLIWATT HERMETICALLY SEALED GLASS SILICON ZENER DIODES
1N4681 ,Leaded Zener Diode General PurposeFeatures:• Complete Voltage Range — 1.8 to 200 Volts• DO-204AH Package — Smaller than Conventional ..
2-406549-4 , INVERTED MODULAR JACK ASSEMBLY, 1X1, SHIELDED, PANEL GROUND, LED
240NQ045 ,45V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplications are in switching power supplies, converters, free-waveformwheeling diodes, and reverse ..
241NQ045 ,45V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
241NQ050 ,SCHOTTKY RECTIFIERapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
243NQ080 ,80V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
24400 , METRIC STANDOFFS AND SPACERS
1N459-1N459ATR
High Conductance Low Leakage Diode
1N459/A Small Signal Diode December 2004 1N459/A Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T = 25°C unless otherwise noted a Symbol Parameter Value Unit V Maximum Repetitive Reverse Voltage 200 V RRM I Average Rectified Forward Current 500 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 4.0 A T Storage Temperature Range -65 to +200 °C STG T Operating Junction Temperature 175 °C J * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Unit P Power Dissipation 500 mW D R Thermal Resistance, Junction to Ambient 300 °C/W θJA Electrical Characteristics T = 25°C unless otherwise noted C Symbol Parameter Conditions Min. Max Units V Breakdown Voltage I = 100μA 200 V R R V Forward Voltage I = 3mA 1.0 V F F 1N459A I = 100mA 1.0 V F I Reverse Leakage 1N459 V = 175V 25 nA R R 1N459A V = 175V, T = 150°C 5 μA R A C Total Capacitance 1N459A V = 0, f = 1.0MHz 6.0 pF T R ©2004 1 1N459/A Rev. A
