1N458A ,125 V, 500 mW low leakage diode 1N458A1N458ADO-35COLOR BAND DENOTES CATHODESmall Signal DiodeAbsolute Maximum Ratings * T = 25°C ..
1N459 ,175 V, 500 mW low leakage diode1N459/A Small Signal DiodeDecember 20041N459/A Small Signal DiodeDO-35Color Band Denotes CathodeAb ..
1N459ATR ,High Conductance Low Leakage Diodeapplications involving pulsed or low duty cycle operations.Thermal CharacteristicsSymbol Parameter ..
1N4607 ,Signal or Computer DiodeAPPLICATIONS.Unit in mm26.0MIN.MAXIMUM RATINGS (Ta=25° C)Maximum (Peak) Reverse VoltageReverse Volt ..
1N4607 ,Signal or Computer DiodeTOSHIBA f1)TScREiTlr/0P'l'01 E? os:llllmvrizso f3lillyhy35 D r-_--'- - -e- -xi _ tff " SI EDit iat. ..
1N4620 ,Conductor Products, Inc. - 400 MILLIWATT HERMETICALLY SEALED GLASS SILICON ZENER DIODES
2-406549-4 , INVERTED MODULAR JACK ASSEMBLY, 1X1, SHIELDED, PANEL GROUND, LED
240NQ045 ,45V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplications are in switching power supplies, converters, free-waveformwheeling diodes, and reverse ..
241NQ045 ,45V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
241NQ050 ,SCHOTTKY RECTIFIERapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
243NQ080 ,80V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
24400 , METRIC STANDOFFS AND SPACERS
1N458A
High Conductance Low Leakage Diode
1N458A 1N458A DO-35 COLOR BAND DENOTES CATHODE Small Signal Diode Absolute Maximum Ratings * T = 25°C unless otherwise noted A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 150 V RRM I Average Rectified Forward Current 500 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 4.0 A T Storage Temperature Range -65 to +200 °C STG T Operating Junction Temperature 175 °C J * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 500 mW D R Thermal Resistance, Junction to Ambient 300 °C/W θJA Electrical Characteristics T =25°C unless otherwise noted A Symbol Parameter Test Conditions Min. Max. Units V Breakdown Voltage I = 100μA 150 V R R V Forward Voltage I = 100mA 1.0 V F F I Reverse Leakage V = 125V 25 μA R R V = 125V, T = 150°C 5 μA R A ©2004 1N458A, Rev. A1
