1N456A ,25 V, 500 mW low leakage diode1N456A Small Signal DiodeDecember 20041N456A Small Signal DiodeDO-35Color Band Denotes CathodeAbso ..
1N4574A ,6.4 VOLT NOMINAL ZENER VOLTAGE + 5%
1N4579 ,6.4 VOLT NOMINAL ZENER VOLTAGE + 5%
1N4579A ,6.4 VOLT NOMINAL ZENER VOLTAGE + 5%
1N4585GP ,800 V, 1 A, miniature glass passivated junction plastic rectifierFeaturesDO-204AC (DO-15)• Plastic package has Underwriters Laboratories 1.0 (25.4)min.Flammability ..
1N4586GP ,1000 V, 1 A, miniature glass passivated junction plastic rectifier1N4383GP thru 1N4385GP, 1N4585GP and 1N4586GPVishay Semiconductorsformerly General SemiconductorGla ..
2-406549-4 , INVERTED MODULAR JACK ASSEMBLY, 1X1, SHIELDED, PANEL GROUND, LED
240NQ045 ,45V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplications are in switching power supplies, converters, free-waveformwheeling diodes, and reverse ..
241NQ045 ,45V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
241NQ050 ,SCHOTTKY RECTIFIERapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
243NQ080 ,80V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
24400 , METRIC STANDOFFS AND SPACERS
1N456A
High Conductance Low Leakage Diode
1N456A Small Signal Diode December 2004 1N456A Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T = 25°C unless otherwise noted a Symbol Parameter Value Unit V Maximum Repetitive Reverse Voltage 30 V RRM I Average Rectified Forward Current 500 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 4.0 A T Storage Temperature Range -65 to +200 °C STG T Operating Junction Temperature 175 °C J * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Unit P Power Dissipation 500 mW D R Thermal Resistance, Junction to Ambient 300 °C/W θJA Electrical Characteristics T = 25°C unless otherwise noted C Symbol Parameter Conditions Min. Max Units V Breakdown Voltage I = 5μA30 V R R V Forward Voltage I = 100mA 1.0 V F F I Reverse Leakage V = 25V 25 nA R R V = 25V, T = 150°C 50 μA R A ©2004 1 1N456A Rev. A
