1N4150TR ,High Conductance Ultra Fast Diode1N4150 / FDLL4150Discrete POWER & SignalTechnologies1N4150 / FDLL4150COLOR BAND MARKING DEVICE 1ST ..
1N4150W-V-GS08 , Small Signal Switching Diode
1N4150W-V-GS08 , Small Signal Switching Diode
1N4151 ,50 V, 500 mW high speed diode
1N4153 ,50 V, 500 mW high speed diode*7,TOSHIBA 'rr):rlilfRlrrlr/()r''ro?,L'? DEI‘IDHESD Cll3ClcGi!''i1 a r909 259£TQ§HLBAijfSQRETEiégfo ..
1N4245GP ,GLASS PASSIVATED JUNCTION RECTIFIERFeaturesDO-204AL (DO-41)• Plastic package has Underwriters Laboratories 1.0 (25.4) MIN. Flammabilit ..
2-406549-4 , INVERTED MODULAR JACK ASSEMBLY, 1X1, SHIELDED, PANEL GROUND, LED
240NQ045 ,45V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplications are in switching power supplies, converters, free-waveformwheeling diodes, and reverse ..
241NQ045 ,45V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
241NQ050 ,SCHOTTKY RECTIFIERapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
243NQ080 ,80V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
24400 , METRIC STANDOFFS AND SPACERS
1N4150TR
High Conductance Ultra Fast Diode
1N4150 / FDLL4150 Discrete POWER & Signal Technologies 1N4150 / FDLL4150 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL4150 BLACK ORANGE LL-34 THE PLACEMENT OF THE EXPANSION GAP DO-35 HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units W Working Inverse Voltage 50 V IV I Average Rectified Current 200 mA O I DC Forward Current 400 mA F Recurrent Peak Forward Current 600 mA i f i Peak Forward Surge Current f(surge) Pulse width = 1.0 second 1.0 A Pulse width = 1.0 microsecond 4.0 A T Storage Temperature Range -65 to +200 °C stg T Operating Junction Temperature 175 C J ° *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 1N / FDLL 4150 P Total Device Dissipation 500 mW D Derate above 25 C 3.33 mW/ C ° ° Thermal Resistance, Junction to Ambient 300 R °C/W θJA ã1997
