1N4149 ,75 V, 500 mW high conductance ultra fast switching diode1N4149 Small Signal DiodeDecember 20041N4149 Small Signal DiodeDO-35Color Band Denotes CathodeAbso ..
1N4150 ,Leaded Silicon Diode SwitchingRev. 5, 21-Nov-02 31N4150VISHAYVishay SemiconductorsOzone Depleting Substances Policy StatementIt i ..
1N4150TR ,High Conductance Ultra Fast Diode1N4150 / FDLL4150Discrete POWER & SignalTechnologies1N4150 / FDLL4150COLOR BAND MARKING DEVICE 1ST ..
1N4150W-V-GS08 , Small Signal Switching Diode
1N4150W-V-GS08 , Small Signal Switching Diode
1N4151 ,50 V, 500 mW high speed diode
2-406549-4 , INVERTED MODULAR JACK ASSEMBLY, 1X1, SHIELDED, PANEL GROUND, LED
240NQ045 ,45V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplications are in switching power supplies, converters, free-waveformwheeling diodes, and reverse ..
241NQ045 ,45V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
241NQ050 ,SCHOTTKY RECTIFIERapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
243NQ080 ,80V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
24400 , METRIC STANDOFFS AND SPACERS
1N4149
High Conductance Fast Diode
1N4149 Small Signal Diode December 2004 1N4149 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T = 25°C unless otherwise noted a Symbol Parameter Value Unit V Maximum Repetitive Reverse Voltage 100 V RRM I Average Rectified Forward Current 500 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 4.0 A T Storage Temperature Range -65 to +200 °C STG T Operating Junction Temperature 175 °C J * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Unit P Power Dissipation 500 mW D R Thermal Resistance, Junction to Ambient 300 °C/W θJA Electrical Characteristics T = 25°C unless otherwise noted C Symbol Parameter Conditions Min. Max Units V Breakdown Voltage I = 5μA 75 V R R I = 100μA 100 V R V Forward Voltage I = 10mA 1.0 V F F I Reverse Leakage V = 20V 25 nA R R V = 20V, T = 150°C 50 μA R A C Total Capacitance V = 0, f = 1.0MHz 2 pF T R t Reverse Recovery Time I = 10mA, V = 6.0V 4ns rr F R R = 100Ω, I = 1mA L rr ©2004 1 1N4149 Rev. A
