1N4148WT ,Small Signal DiodeFeaturesDevice Marking CodeDevice Type Device Marking• Fast Switching Diode (Trr <4.0nsec)1N4148WT ..
1N4148W-T ,Small Signal Diodeapplications involving pulsed or low duty cycle operations.Thermal CharacteristicsSymbol Parameter ..
1N4148W-T1 ,Top Electronics - SURFACE MOUNT FAST SWITCHING DIODE
1N4148WT-7-F , SURFACE MOUNT FAST SWITCHING DIODE
1N4148W-TP , High Speed Switching Diode 400mW
1N4148W-TP , High Speed Switching Diode 400mW
2-406549-4 , INVERTED MODULAR JACK ASSEMBLY, 1X1, SHIELDED, PANEL GROUND, LED
240NQ045 ,45V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplications are in switching power supplies, converters, free-waveformwheeling diodes, and reverse ..
241NQ045 ,45V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
241NQ050 ,SCHOTTKY RECTIFIERapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
243NQ080 ,80V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
24400 , METRIC STANDOFFS AND SPACERS
1N4148WT-1N4148W-T
Small Signal Diode
1N4148WT / 1N4448WT / 1N914BWT — High Conductance Fast Switching Diode September 2009 1N4148WT / 1N4448WT / 1N914BWT High Conductance Fast Switching Diode Features Device Marking Code Device Type Device Marking • Fast Switching Diode (Trr <4.0nsec) 1N4148WT E1 • Flat Lead, Surface Mount Device Under 0.70mm Height 1N4448WT E2 1N914BWT E3 • Extremely Small Outline Plastic Package SOD523F • Moisture Level Sensitivity 1 • Pb-free Version and RoHS Compliant Cathode Anode • Matte Tin (Sn) Lead Finish ELECTRICAL SYMBOL SOD-523F • Green Mold Compound Ba nd Indicates Cathode Absolute Maximum Ratings* T =25°C unless otherwise noted A Symbol Parameter Value Units V Non-Repetitive Peak Reverse Voltage 75 V RSM V Repetitive Peak Reverse Voltage 75 V RRM I Repetitive Peak Forward Current 300 mA FRM T Operating Junction Temperature Range -55 to +150 °C J T Storage Temperature Range -55 to +150 °C STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation (T =25°C) 200 mW D C R Thermal Resistance, Junction to Ambient 500 °C/W θJA * Device mounted on FR-4 PCB minimum land pad. Electrical Characteristics T =25°C unless otherwise noted A Symbol Parameter Test Conditions Min Typ Max Units I = 100 μA 100 R BV Breakdown Voltage V R I = 5 μA 75 R V = 20 V 25 nA R I Reverse Current R V = 75 V 5 μA R 1N4448WT/ 914BWT I = 5 mA 0.62 0.72 F V Forward Voltage 1N4148WT I = 10 mA 1 V F F 1N4448WT/ 914BWT I = 100 mA 1 F C Diode Capacitance V = 0, f = 1 MHz 4 pF O R I = 10 mA, V = 6.0 V F R T Reverse Recovery Time 4nS RR I = 1 mA, R = 100 Ω RR L © 2009 1N4148WT / 1N4448WT / 1N914BWT Rev. A2 1
