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19TQ015-19TQ015S-19TQ015STRR
15V 19A Schottky Discrete Diode in a TO-220AC package
International
IeaR Rectifier
Bulletin PD-20266 rev.B 02/01
19TQO15
19TQO158
SCHOTTKYRECTlFIER
Major Ratings and Characteristics
Characteristics
19TQO1 5
Rectangular
waveform
|F(AV)
IFSIVI @tp= 5 us sine
v @19Apk,TJ=75°C 0.32
T J range
-55t0125
|F(AV) = 19Amp
VR = 15V
DescriptionlFeatu res
The 19TQO15 Schottky rectifer has been optimized for ultra
Iowforward voltage drop specifically forthe OR-ing of parallel
power supplies. The proprietary barriertechnology allows for
reliable operation up to 125° C junction temperature. Typical
applications are in parallel switching powersupplies, convert-
ers, reverse battery protection, and redundant power
subsystems.
. 125°C To operation " < 5V)
. OptimizedforOR-ing applications
. Ultra low forward voltage drop
. Highfrequencyoperation
. Guard ring for enhanced ruggedness and long term
reliability
. High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Case Styles
19TQO15
19TQ015S
19TQ015/ 19TQO15S
Bulletin PD-20266 rev. B 02/01
International
IDR Rectifier
Voltage Ratings
Part number 19TQ015
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 15
Absolute Maximum Ratings
Parameters 19TQ Units Conditions
IFW) Max.AverageForwardCurrent 19 A 50%dutycycle@Tc=80°C,rectangularwaveform
*See Fig. 5
IFSM Max. PeakOneCycle Non-Repetitive 700 5ps Sine or3ps Rect. pulse 5ollt.owing..tyw rated
A load condition and
SurgeCurrent *SeeFig. 7 330 10ms Sine or6ms Rect. pulse with rated VRRM applied
E AS Non-RepetitiveAvalancheEnergy 6.75 mJ T J = 25 °C, IAS-- 1 .50Amps, L = 6 mH
|AR RepetitiveAvalancheCurrent 1.50 A Currentdecayinglinearlytozeroin1usec
Frequencylimited byT, max.VA= 3xVR typical
Electrical Specifications
Parameters 19TQ Units Conditions
Vo, Max. Forward Voltage Drop (1) 0.36 V @ 19A T = 25 "C
* See Fig. 1 0.46 v @ 38A J
0.32 V @19A To-- 75°C
0.43 V @ 38A
Ira, Max. Reverse LeakageCurrent(1) 10.5 mA T, = 25 "C -
. VR - rated VR
*See Fig.2 522 mA TJ=100°C
465 mA TJ=100°C,VR=12v
285 mA TJ=100°C,VR=5V
Cr Max. Junction Capacitance 2000 pF VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 "C
Ls Typical Series Inductance 8.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10,000 V/ us
(Rated VR)
ThermaI-Mechanical Specifications (1) Pulse WIdth < 300ps, Duty Cycle < 2%
Parameters 19TQ Units Conditions
T, Max.JunctionTemperatureRange -55to125 ''C
Tstg Max.StorageTemperature Range -55to150 (
Re, JC Max.ThermaIResistanceJunction 1.50 ''CAN DCoperation *See Fig.4
toCase
Rmcs TypicalThermalResistance,Caseto 0.50 °C/W Mountingsurface,smoothandgreased
Heatsink
wt ApproximateWeight 2(0.07) g (oz.)
T MountingTorque Min. 6(5) Kg-cm
Max. 12(10) (lbf-in)
