1815 ,NPN general purpose transistorAPPLICATIONS. Unit in mmDRIVER STAGE AMPLIFIER
182NQ030 ,30V 180A Schottky Discrete Diode in a D-67 HALF-Pak packageapplications are in switching power supplies, convert-waveformers, free-wheeling diodes, and revers ..
182NQ030R ,30V 180A Schottky DISCR. (R) Diode in a D-67 HALF-Pak packageFeaturesThe 182NQ030 high current Schottky rectifier module hasbeen optimized for very low forward ..
183NQ080 ,80V 180A Schottky Discrete Diode in a D-67 HALF-Pak packageapplicationsI Rectangular 180 AF(AV)are in switching power supplies, converters, free-wheelingwavef ..
183NQ100 ,100V 180A Schottky Discrete Diode in a D-67 HALF-Pak packageFeaturesMajor Ratings and CharacteristicsThe 183NQ high current Schottky rectifier module series ha ..
1893AFLF , 3.3-V 10Base-T/100Base-TX Integrated PHYceiver™
2120 , MALE/FEMALE THREADED STANDOFFS
212-0 , MALE/FEMALE THREADED STANDOFFS
21281BB , Intel® StrongARM® SA-110 Microprocessor
21281CB , Intel® StrongARM® SA-110 Microprocessor
21281-CB , Intel® StrongARM® SA-110 Microprocessor
21281DB , Intel® StrongARM® SA-110 Microprocessor
1815
NPN general purpose transistor
TOSHIBA 2SC1815
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC1l8M5
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. Unit in mm
DRIVER STAGE AMPLIFIER APPLICATIONS.
. High Voltage and High Current fl
: VCE0=50V(Min.), 1C=150rnA(Max.) E
q Excellent hFE Linearity g
: hFE(2)=100 (Typ.) at VCE=6V, Ic=150mA Q45 ) H , 301
: hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.) (155MAX. -, I m ’4 g;
q Low Noise : NF=1dB (Typ.) at f=1kHz 0.15 ' ct E
. Complementary to 2SA1015 (O, Y, GR class) , [ "
MAXIMUM RATINGS (Ta = 25°C) 1.2'Y 127
CHARACTERISTIC SYMBOL RATING UNIT g x-
_ All q <1
Collector-Base Voltage VCBO 60 V l 2 " E
Collector-Emir Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V 1. EMITTER
Collector Current IC 150 mA i,) glldfcToR
Base Current . . ' IB 50 mA JEDE C TO-92
Colleetor Power Dissipation PC 400 mW EIA J S C- 43
Junction Temperature Tj 125 C T OSHIB A 2- 5F 1B
Storage Temperature Range Tstg -55--125 T Weight : 0.21g
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=60V, IE=O - - 0.1 szA
Emitter Cufroff Current IEBO VEB=5V, Ic=0 - - 0.1 ,uA
hFE(1)
V =6V, I =2mA 70 - 700
DC Current Gain (Note) CE C
hFE(2) VCE = 6V, IC = 150mA 25 100 -
Collector-Er/ter Saturation
Voltage VCE(sat) IC - lOOmA, IB - 10rnA .- 0.1 0.25 V
Base-Emitter Saturation Voltage VBE(sat) 1C=100mA, IB=10mA - - 1.0 V
Transition Frequency fT VCE = 10V, IC = 1mA 80 - MHz
Collector Ouput Capacitance Cob VCB=10V, IE=O, f = 1MHz - 2.0 3.5 pF
. . . , VCE=10V, IE-- -lmA
Base Intrinsic Resistance rbb f= 3 OMHz - 50 - Q
. . VCE =6V, 10:0.1mA
Noise Figure NF f=1kHz, RG=10kQ - 1.0 10 dB
Note : hFE Classification 0 '. 70--140 Y : 120--240 GR : 200--400 BL : 350--700
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity p.nd.vuln.erabjlity t9 physical stress. It is the responsibilit of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid Situations m which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
1997-04-10 1/3
TOSHIBA
IC - VCE
COMMON EMITTER
6.0 Ta=25°C
COLLECTOR CURRENT ‘0 (mA)
0 1 2 3 4 5 6 7 8
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
COMMON EMITTER
Ic / IB = 10
Ta =100°C
COLIECTOR-EMI’I'I‘ER SATURATION
VOLTAGE vegan” (V)
0.1 0.3 1 3 10 30 100 300
COLLECTOR CURRENT 1C (mA)
IB - VBE
1000 COMMON EMITTER
300 CE
Ta = 100°C
BASE CURRENT 13 gm)
0 0.4 0.8 1.2 1.6 2.0
BASE-EMITTER VOLTAGE VBE (V)
2SC1815
hFE - IC
COMMON EMITTER
- VCE=6V
1000 ---- VCE=1V
300 Ta = 100°C
DC CURRENT GAIN hm
0.1 0.3 l 3 10 30 100 300
COLLECTOR CURRENT IC (mA)
VBE(sat) - IC
COMMON EMITTER
Ic/IB=10
Ta=25°C
BASEEMITTER SATURATION
VOLTAGE Vans“) (V)
‘0.1 0.3 1 3 10 30 100 300
COLLECTOR CURRENT 10 (mA)
fT - IC
COMMON EMITTER
VCE=10V
1000 Ta=25°C
TRANSITION FREQUENCY fT (MHz)
0.1 0.3 1 3 10 30 100 300
EMITTER CURRENT 10 (mA)
961001EAA2'
O The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third games which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA C
O The information contained herein is subject to change without notice.
RPORATION or others.
1997-04-10 2/3
TOSHIBA
h PARAMETER
COLLECTOR POWER DISSIPATION PC (mW)
h PARAMATER - IC
COMMON EMITTER
VCE=12V Ta=25°C
f=270Hz
hreX10-4
0.3 1 3 10 30
COLLECTOR CURRENT 10 (mA)
25 50 75 100 125
AMBIENT TEMPERATURE Ta (°C)
h PARAMETER
2SC1815
h PARAMATER - VCE
COMMON EMITTER
1C = 2mA Ta = 25°C f= 270Hz
GR hfe
.5 l 3 10 30 100 300
COLLECTOEEMITTER VOLTAGE VCE (V)
1997-04-10 3/3
www.ic-phoenix.com
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