15MQ040NTRPBF ,SCHOTTKY RECTIFIERApplicationsFSwitching power suppliesMeter protectionV 40 VRRMReverse protection for power input t ..
15MQ040NTRPBF ,SCHOTTKY RECTIFIERFeaturesT range - 40 to 150 °CJSurface mountableExtremely low forward voltageImproved reverse block ..
15MQ040TR ,40V 1.7A Schottky Discrete Diode in a SMA packageApplicationsF(AV)Switching power supplies@ 180° Sinusoidal 1.5 AMeter protectionReverse protection ..
15N06 , N -CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
15N06 , N -CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
15N40 , 15A, 400V N-CHANNEL POWER MOSFET
1SS184 ,SWITCHING DIODES1SS184 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS184 Unit: mmUltra High Speed Switching Appli ..
1SS187 ,Signal-Switching Diode1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mmUltra High Speed Switching Appli ..
1SS187 ,Signal-Switching Diode1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mmUltra High Speed Switching Appli ..
1SS187 ,Signal-Switching Diode1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mmUltra High Speed Switching Appli ..
1SS187 ,Signal-Switching Diode1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mmUltra High Speed Switching Appli ..
1SS187 ,Signal-Switching Diode1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mmUltra High Speed Switching Appli ..
15MQ040NTRPBF
SCHOTTKY RECTIFIER
International
ISER Rectifier
Bulletin PD-20517 rev.H 07/04
15MQO4ON
SCHOTTKYRECTlFlER
Major Ratings and Characteristics
Characteristics 15MQO4ON Units
' DC 3 A
VRRM 40 V
'ss, @ tp = 5 us sine 330 A
VF @2Apk, TJ=125°C 0.43 V
TJ range -40to150 'C
|F(AV) = 3Amp
VR = 40V
Description! Features
The 15MQO40N Schottky rectifer is designed to be used for
Iow-power applications where a reverse voltage of 40 volts is
ancountered and surface mountable is required.
Applications
. Switching power supplies
. Meter protection
. Reverse protection for power input to PC board circuits
. Battery isolation and charging
. Low threshold voltage diode
. Free-wheeling or by-pass diode
. Low voltage clamp
Features
. Surface mountable
. Extremely low forward voltage
. Improved reverse blocking voltage capability relative
to other similar size Schottky
. Compact size
Case Styles
15MQO40N
Cathode Anode
wwW.irf.com
15MQO40N
Bulletin PD-20517 rev.H 07/04
International
TOR Rectifier
Voltage Ratings
Part number 15MQ040N
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 40
Absolute Maximum Ratings
Parameters 15MQ Units Conditions
IHAV) Max. Average Forward Current 2.1 A 50% duty cycle @ TL = 105 "C, rectangularwave form.
* See Fig. 4 On PC board 9mm2 island(.013mmlhickcopperpad area)
IFSM Max. Peak One Cycle Non-Repetitive 330 5ps Sine or 3ps Rect. pulse Following any rated
A load condition and
Surge Current * See Fig. 6 140 10ms Sine or 6ms Rect. pulse with rated VRRM applied
EAS Non-Repetitive Avalanche Energy 6.0 mJ T: = 25 ''C, |As = 1A, L =12mH
|AR Repetitive Avalanche Current 1.0 A
Electrical SpeciMations
Parameters 15MQ Units Conditions
VFM Max. Forward Voltage Drop (1) 0.42 V @ IA TJ = 25 °C
* See Fig. 1 0.49 V @ 2A
0.34 V @ IA Tu =125 °C
0.43 V @ 2A
IRM Max. Reverse Leakage Current (1) 0.5 mA T, = 25 "C
. VR = rated VR
* See Fig. 2 20 mA TJ = 125 "C
VF(TO) Threshold Voltage th26 V T: = T: max.
r, Forward Slope Resistance 64.6 mo
c, Typical Junction Capacitance 134 pF VR = 1OVDC, Tu = 25°C, test signal = 1Mhz
LS Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps (Rated VR)
(1) Pulse 1Mdth < 300ps, Duty Cycle < 2%
ThermaI-Mechanical Specifications
Parameters 15MQ Units Conditions
T J Max.Junction Temperature Range (*) -40to 150 "C
Tstg Max. Storage Temperature Range -40 to 150 "C
RthJA Max. Thermal Resistance Junction 80 'CA/V DC operation
to Ambient
wt Approximate Weight 0.07(0.002) g(oz.)
Case Style SMA Similar D-64
Device Marking IR3F
(*) dPtot 1
dT] Rth(j-a)
thermal runaway condition fora diode on its own heatsink
