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11DQ09-11DQ10-11DQ10TR
90V 1.1A Schottky Discrete Diode in a DO-204AL package
International
D,f2R Rectifier
Bulletin PD-2.289 reV.F 06/03
11DQOQ
11DQ10
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics 11DQ.. Units
IRAV) Rectangular 1.1 A
waveform
VRRM 90/ 100 V
|FSM @tp=5ps sine 85 A
VF @1Apk,TJ=25°C 0.85 V
To range -40 to 150 "C
1.1Amp
Description/ Features
The 11DQ.. axial leaded Schottky rectifier has been optimized for
very low forward voltage drop, with moderate leakage. Typical
applications are in switching power supplies, converters, free-
wheeling diodes, and reverse battery protection.
. Low profile, axial leaded outline
. High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
. Very low forward voltage drop
. High frequency operation
. Guard ring for enhanced ruggedness and long term
reliability
CASE STYLE AND DIMENSIONS
2.70 (0.106)
2.29 (0.090) 0lA.
27.0 (1.06) MIN.
(2 PLCS) 5.21 (0.205)
tC. MAX.
0.86 (0.034)
0.72 (0.028) OA
(2 PLCS.)
CAYKOOE BAND
27.0 (1 ml MIN.
(2 Km.)
5 21 (0.2%)
127(0050) MAX.
H FLASH (2 PLCS.)
0..., W. .1 L
0.72 (0.028) DIA.
(2 PLCS.)
2 ro (0.106)
2.29 (0.090) DIA.
Conform to JEDEC Outline Do-204AL (D0-41)
Dimensions in millimeters and inches
11DQ09,11DQ10
International
Bulletin PD-2.289 rev. F 06103 ISER Rectifier
Voltage Ratings
Part number 11DQ09 11DQ10
VR Max. DC Reverse Voltage (V)
. 90 100
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters 11DQ.. Units Conditions
IHAV) Max. Average Forward Current 1.1 A 50% duty cycle @ TC = 75°C, rectangularwave form
* See Fig. 4
|FSM Max. PeakOne Cycle Non-Repetitive 85 5ps Sine or3ps Rect. pulse Following any rated
. A . load condition and with
Surge Current * See Fig. 6 14 10ms Sine or 6ms Rect. pulse rated vRRM applied
EAS Non-Repetitive Avalanche Energy 1.0 mJ TJ = 25 "C, Us = 0.5Amps, L= 8 mH
I AR Repetitive Avalanche Current 0.5 A Currentdecaying linearly to zero in 1 psec
Frequencylimited by TJ max. VA-- 15va typical
Electrical Specifications
Parameters 11DQ.. Units Conditions
VFM Ite F0n~ard Voltage Drop 0.85 V @ IA T = 25 "C
See Fig. 1 (1) 0.96 V @ 2A J
0.68 V @ IA o
0.78 v @ 2A T, - 125 C
|RM Max. Reverse Leakage Current 0.5 mA TJ = 25 ''C
. V = rated V
*See Fig.2 (1) 1.0 mA Tv-- 125°C R R
c, Typical Junction Capacitance 35 pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
Ls Typical Series Inductance 8.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps (Rated VR)
(1) Pulse \Mdth < 300ps, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters 11DQ.. Units Conditions
T, Max. Junction Temperature Range(*) -40 to 150 ''C
Mg Max. Storage Temperature Range -40 to150 ''C
RthJA Max. Thermal Resistance Junction 100 "CAN DC operation
to Ambient \Mthout cooling fin
RthJL Typical Thermal Resistance Junction 81 "C/W DC operation (See Fig. 4)
to Lead
wt Approximate Weight 0.33(0.012) g(oz.)
Case Style DO-204AL(DO-41)
(*) dPtot 1
dT] Rth(j-a)
thermal runaway condition for a diode on its own heatsink
