11DQ03 ,30V 1.1A Schottky Discrete Diode in a DO-204AL packageBulletin PD-2.287 rev. E 03/0311DQ0311DQ04SCHOTTKY RECTIFIER 1.1 AmpMajor Ratings and Charact ..
11DQ03 ,30V 1.1A Schottky Discrete Diode in a DO-204AL packageapplications are in switching power supplies, convert-I Rectangular 1.1 AF(AV)ers, free-wheeling di ..
11DQ04 ,40V 1.1A Schottky Discrete Diode in a DO-204AL packageFeaturesThe 11DQ.. axial leaded Schottky rectifier has been optimizedCharacteristics 11DQ.. Unitsfo ..
11DQ04 ,40V 1.1A Schottky Discrete Diode in a DO-204AL packageapplications are in switching power supplies, convert-I Rectangular 1.1 AF(AV)ers, free-wheeling di ..
11DQ05TR ,50V 1.1A Schottky Discrete Diode in a DO-204AL packageFeaturesMajor Ratings and CharacteristicsThe 11DQ.. axial leaded Schottky rectifier has been optimi ..
11DQ06 ,60V 1.1A Schottky Discrete Diode in a DO-204AL packageapplications are in switching power supplies, convert-I Rectangular 1.1 AF(AV)ers, free-wheeling di ..
182NQ030 ,30V 180A Schottky Discrete Diode in a D-67 HALF-Pak packageapplications are in switching power supplies, convert-waveformers, free-wheeling diodes, and revers ..
182NQ030R ,30V 180A Schottky DISCR. (R) Diode in a D-67 HALF-Pak packageFeaturesThe 182NQ030 high current Schottky rectifier module hasbeen optimized for very low forward ..
183NQ080 ,80V 180A Schottky Discrete Diode in a D-67 HALF-Pak packageapplicationsI Rectangular 180 AF(AV)are in switching power supplies, converters, free-wheelingwavef ..
183NQ100 ,100V 180A Schottky Discrete Diode in a D-67 HALF-Pak packageFeaturesMajor Ratings and CharacteristicsThe 183NQ high current Schottky rectifier module series ha ..
1893AFLF , 3.3-V 10Base-T/100Base-TX Integrated PHYceiver™
1893BFLF , 3.3-V 10Base-T/100Base-TX Integrated PHYceiver™
11DQ03-11DQ04
30V 1.1A Schottky Discrete Diode in a DO-204AL package
International
ISZR Rectifier
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics 1 1 DQ.. Units
IHAV) Rectangular 1.1 A
waveform
VRRM 30/40 V
|FSM @tp=5ys sine 225 A
VF @1Apk,TJ=25°C 0.55 V
T, range -40 to150 ''C
Bulletin PD-2.287 rev.E 03/03
11 DQO3
11 DQO4
1.1Amp
Descriptionl Features
The HBO. axial leaded Schottky rectifier has been optimized
for very low forward voltage drop, with moderate leakage.
Typical applications are in switching power supplies, convert-
ers, free-wheeling diodes, and reverse battery protection.
. Low profde, axial leaded outline
. High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
. Very low forward voltage drop
. High frequency operation
. Guard ring for enhanced ruggedness and long term
reliability
CASE STYLE AND DIMENSIONS mm mm
27.0 (1.06) MIN.
tt Puls.)
2.70 (0.106)
2.29 (0.090) 0IA, 5 21
I -"---"T CmitDE
27.0 (106) MIN. 233%ng ,
<2) 521 (0205) l] m
0.06 (0034)
Ts,). iiii%iii" cl L
(2 LCS.)
2.70(0.106) DIA
0.86 (0.034) DIA 2.2901090) _
0.72 (0.028) .
(2 PLCS.)
Conform to JEDEC Outline DO-204AL (D0-41)
Dimensions in millimeters and inches
11 D003, 11 DQO4
International
Bulletin PD-2.287 rev. E 03103 IEER Rectifier
Voltage Ratings
Part number 11DQOS 11DQO4
VR Max. DC Reverse Voltage (V) 30 40
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters 11DQ.. Units Conditions
IHAV) Max. Average Forward Current 1.1 A 50% duty cycle @ Tc = 75°C, rectangularwave form
* See Fig. 4
|FSM Max.PeakOneCycle Non-Repetitive 225 5ps Sine or 3ps Rect. pulse Following _any rated .
. A . load conditioh and with
Surge Current * See F Ig. 6 35 10ms Sine or 6ms Rect. pulse rated vRRM applied
EAS Non-Repetitive Avalanche Energy 3.0 mJ To = 25 "C, IAS =1.0Amps,L= 6mH
I AR Repetitive Avalanche Current 1.0 A Currentdecaying linearly to zero in 1 psec
Frequency limited by T, max. VA-- 1.5 xv,, typical
Electrical Specifications
Parameters 11DQ.. Units Conditions
IG, Max. Forward Voltage Drop 0.55 V @ IA T: = 25 cc
* See Fig. 1 (1) 0.71 V @ 2A
0.50 V @ IA T - 125°C
0.61 v @ 2A J -
[RM Max. Reverse Leakage Current 1.0 mA T J = 25 "C VR = rate d VR
* See Fig. 2 (1) 6.0 mA TJ = 125 ''C
c, Typical Junction Capacitance 60 pF VR = 5VDc (test signal range 100Khz to 1Mhz) 25°C
LS Typical Series Inductance 8.0 nH Measured lead to lead 5mm from package body
dvldt Max. Voltage Rate of Change 10000 V/ps (Rated vp
(1) Pulse i/With < 300ps, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters 11DQ.. Units Conditions
TJ Max. Junction Temperature Range (*) -40 to 150 ''C
Tstg Max. Storage Temperature Range -40 to 150 °C
R"1JA Max.ThermaIResistance Junction 100 "C/W DC operation
to Ambient VVIthOut cooling fin
RthL Typical Thermal Resistance Junction 81 ''CIW DC Operation (* See Fig.4)
to Lead
wt Approximate Weight 0.33(0.012) g(oz.)
Case Style D0-204AL(D0-41
(*) dPtot 1 . . . . .
__. < . thermal runaway condition fora diode on its own heatsink
dT] Rth(j-a)
