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112MT120KB-112MT80KB-51MT160KB
1200V 3 Phase Bridge in a INT-A-Pak package
International
Titat, Rectifier
Bulletin 127503 08/97
IVIT..KB SERIES
THREE PHASE CONTROLLED BRIDGE
Features
Package fully compatible with the industry standard INT-A-pak
power modules series
High thermal conductivity package, electrically insulated case
Outstanding number of power encapsulated components
Excellent power volume ratio
4000 VRMS isolating voltage
UL E78996 approved Sil
Description
A range of extremely compact, encapsulated three phase
controlled bridge rectifiers offering efficient and reliable
operation. They are intended for use in general purpose
and heavy duty applications.
Major Ratings and Characteristics
53MT.KB 93MT.KB 113MT.KB
Parameters 52MT.KB 92MT.KB 112MT.KB Units
51MT.KB 91MT.KB 111MT.KB
IO 55 90 110 A
@Tc 85 85 85 °c
IFSM @50Hz 390 950 1130
@60Hz 410 1000 1180
121 @50Hz 770 4525 6380 A25
@ 60Hz 700 4130 5830 A23
|2\/t 7700 45250 63800 Ales
VRRM range 800 to 1600 V
TSTG range -40 to 125 ''C
T., range -40 to 125 ''C
PowerModules
53-93-113MT..KB Series International
Bulletin 127503 08197 IEBR Rectifier
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage VRRM, maximum VRSM, maximum VDRM. max. repetitive IRRM/IDRM max.
Type number Code repetitive peak non-repetitive peak peak off-state voltage @ T J = 125°C
reverse voltage reverse voltage gate open circuit
V V V mA
80 800 900 800
100 1000 1100 1000
53l52/51MT..KB 120 1200 1300 1200 10
140 1400 1500 1400
160 1600 1700 1600
80 800 900 800
93/92/91 MT..KB 100 1000 1100 1000
113/112/111MT..KB 120 1200 1300 1200 20
140 1400 1500 1400
160 1600 1700 1600
Forward Conduction
53MT.KB 93MT.KB 113MT.KB
Parameter 52MT.KB 92MT.KB 112MT.KB Units Conditions
51 MT.KB 91 MT.KB 111MT.KB
IO Maximum DC output current 55 90 110 A 120'' Rect conduction angle
@ Case temperature 85 85 85 ''C
ITSM Maximum peak. onesyde 390 950 1130 A t = 10ms No voltage
forward, non-repetitive 410 1000 1180 1= 8.3ms reapplied
on state surge current 330 800 950 t = 10ms 100% VRRM
345 840 1000 t = 8.3ms reapplied Initial
Pt Maximum Pt for fusing 770 4525 6380 A23 t = 10ms No voltage TJ = T, max.
700 4130 5830 t = 8.3ms reapplied
540 3200 4510 t = 10ms 100% VRRM
500 2920 4120 t = 3.3ms reapplied
Wt Maximum Wt for fusing 7700 45250 63800 ANS t = 0.1 to 10ms, no voltage reapplied
Wtrov Low level value of threshold 1.17 1.09 1.04 V (16.7% x n x [T(AV) < I < n x tres)), @ T J max.
voltage
ifsrcv High level value of threshold 1.45 1.27 1.27 (I > It x IWW)), © T, max.
voltage
rt1 Low level value on-state 12.40 4.10 3.93 mn (16.7% x n x [T(AV) < I < tt x l1'(AV))-@ T: max.
slope resistance
rm High level value on-state 11.04 3.59 3.37 (I > It x HAW)! @ T., max.
slope resistance
VTM Maximum orFstate voltage drop 2.68 1.65 1.57 V lpk = 150A, T J = 25°C
k, = 400ps single junction
dildt Max. non-repetitive rate 150 Alps T J = 25°C, from 0.67 VDRM. ITM-- 1t x ITW).
of rise of turned oncurrent lg = 500mA,tr< 0.5 ps,tp > 6 us
Ir, Max. holding current 200 T J = 27C, anode supply= 6V,
mA resistive load, gate open circuit
L Max. latching current 400 T J = 25cC, anode supply = 6V, resistive load
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