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10MQ060N-10MQ060NTR
60V 1.5A Schottky Discrete Diode in a SMA package
International
I&ER Rectifier
Bulletin PD-20519 rev.l 03/03
10MQ060N
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
2.1 Amp
Description) Features
. . . The 10MQO60N surface mount Schottky rectifier has been
Characteristics 10MQ060N Units designed for applications requiring low forward drop and very
small foot prints on PC boards. Typical applications are in disk
IF DC 2.1 A thes, switching povyer supplies, converters, free-vgheeling
diodes, battery charging, and reverse battery protection.
VRRM 60 V . Small foot print, surface mountable
. Low forward voltage drop
|FSM @tp = 5 ps sine 40 A . High frequency operation
I Gy.a.r1.ring for enhanced ruggedness and long term
VF @1.5Apk,TJ=125°C 0.63 V reliability
To range -55 to 150 ''C
DeviceMarking: IRIH CATHODE ANODE
1.40 (.055):[ H 2.50 (.098) , (i) Ci) j
1.60 (.062) 2.90 (.114)
4.00 (.157)
4.60 (.181)
2.10 MAX.
.152 (.006) C085 MAX.)
.305 (.012) 1.47 MIN.
fl (.058 MIN.)
200 (.078) -
244 (.096) 7,
4; A .103 (.004) J;
0_76 (.030) - #2031008) 1.27 MIN.
1.52 (060) 4.80 (A88) (.050 MIN.)
5.28 (.208)
Ci) POLARITY (T PART NUMBER
5.53 (.218)
SOLDERING PAD
Outline SMA Similar to D-64
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
10MQ060N
Bulletin PD-20519 rev.| 03/03
International
ICm Rectifier
Voltage Ratings
Part number 10MQ060N
VR Max. DC Reverse Voltage (V)
a,,, Max. Working Peak Reverse Voltage (V) 60
Absolute Maximum Ratings
Parameters 10MQ Units Conditions
IHAV) Max. Average Forward Current 1.5 A 50% duty cycle @ TL: 120 °C, rectangularwave form.
* See F ig. 4 On PC board 9mm2island(.013mmthickcopperpad area)
IFSM Max. PeakOne Cycle Non-Repetitive 40 5ps Sine or3ps Rect. pulse 5ollpwing.yy rated
A load condition and
Surge Current * See Fig. 6 10 10ms Sine or6ms Rect. pulse with rated VRRM applied
EAS Non-RepetitiveAvaIancheEnergy 2.0 mJ T, = 25 ''C, IAS = 1A, L= 4mH
|AR RepetitiveAvalancheCurrent 1.0 A
Electrical Specifications
Parameters 10MQ Units Conditions
. . V 1A
Vo, Max Forward Voltage Drop (1) 0 63 @ T, = 25 a C
* See Fig. 1 0.71 V @ 1.5A
0.57 V @ 1A T, =125 "C
0.63 V @ 1.5A
lm, Max. Reverse Leakage Current (1) 0.5 mA T J = 25 "C v,, = rated VR
* See Fig. 2 7.5 mA T, = 125 ''C
VF(TO) Threshold Voltage 0.45 V T J = T J max.
rt Forward Slope Resistance 86.8 mn
C T Typical Junction Capacitance 31 pF VR = 10VDC, T, = 25°C, test signal = 1Mhz
L s Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps (Rated VR)
(1) Pulse VWdth < 300ps, Duty Cycle < 2%
ThermaI-Mechanical Specifications
Parameters 10MQ Units Conditions
T J Max.Junction Temperature Range(*) -5510150 "C
Tstg Max.Storage Temperature Range -55 to 150 ''C
RthJA Max.Thermal ResistanceJunction 80 "CAN DCoperation
toAmbient
wt Approximate Weight 0.07(0.002) g (oz.)
CaseStyle SMA SimilarD-64
Device Marking IRI H
(')dPtot < 1
an Rth(j-a)
thermal runaway condition for a diode on its own heatsink
