10MQ040N ,40V 1.5A Schottky Discrete Diode in a SMA packageapplications are in disk drives,I DC 2.1 Aswitching power supplies, converters, free-wheeling diode ..
10MQ040NPBF ,SCHOTTKY RECTIFIERapplications are in disk drives,I DC 2.1 Aswitching power supplies, converters, free-wheeling diode ..
10MQ040NPBF ,SCHOTTKY RECTIFIERBulletin PD-20772 rev. A 07/0410MQ040NPbFSCHOTTKY RECTIFIER 2.1 AmpI = 2.1AmpF(AV)V = 40VRMaj ..
10MQ040NTR ,40V 1.5A Schottky Discrete Diode in a SMA packageBulletin PD-20518 rev. M 03/0410MQ040N2.1 AmpSCHOTTKY RECTIFIERSMAMajor Ratings and Character ..
10MQ040NTRPBF ,SCHOTTKY RECTIFIERFeaturesThe 10MQ040NPbF surface mount Schottky rectifier has beenCharacteristics Value Unitsdesigne ..
10MQ060N ,60V 1.5A Schottky Discrete Diode in a SMA packageapplications are in diskdrives, switching power supplies, converters, free-wheelingI DC 2.1 AFdiode ..
17808 , Three-Terminal Regulator
17808 , Three-Terminal Regulator
17809 , Three-Terminal Regulator
17810 , Three-Terminal Regulator
17812 , Three-Terminal Regulator
17815 , Three-Terminal Regulator
10MQ040N-10MQ040NTR
40V 1.5A Schottky Discrete Diode in a SMA package
Bulletin PD-20518 rev.M 03/04
International
IsaR Rectifier 10MQ040N
SCHOTTKY RECTIFIER 2.1 Amp
Major Ratings and Characteristics Description/ Features
. . . The 10MQ040N surface mount Schottky rectifier has been de-
Characteristics 10MQ040N Units signed for applications requiring low forward drop and very small
foot prints on PC boards. Typical applications are in disk drives,
' DC 2.1 A switching ptmersupplies,corwerters,free-wheeling diodes. battery
charging, and reverse battery protection.
VRRM 40 V . Small foot print, surface mountable
. Low forward voltage drop
IFSM @tp=5ps sine 120 A . High frequency operation
. anrq .r.ing for enhanced ruggedness and long term
VF @1.5Apk, T J=125°c 0.56 v reliability
TJ range - 55 t0150 "C
Device Marking: IRIF CATHODE ANODE
(.055) 2.50 (.098) (D (ji) I
(O62) 2.90(.114)
4.00(.157) co POLARITY Ci) PART NUMBER
4.50(.131)
2.10 MAX.
.152 (.006) (.085 MAX.)
. .305 (.012) 1.47 MIN.
-7L" l (.050 MIN.)
2.00 (.078)
2.44 (.096)
li--, A .103 (.004) E
0.76 (.030) Jr-CCC-Tl-koi' (.008) 1_27MIN. l
1.52 (.060) 4.80(.188) (.050 MIN.) F
5.28 (.208) '
5.53 (.218)
SOLDERING PAD
Outline SMA Similar to D-64
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
1
10MQO4ON
Bulletin PD-20518 rev.M 03/04
International
IEER Rectifier
Voltage Ratings
Part number 10MQ040N
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters 10MQ Units Conditions
IFW) Max. Average Forward Current 1.5 A 50% duty cycle @ TL = 123 "C, rectangularwave form.
* See Fig. 4 On PC board 9mm2 island(.013mmthickoopperpad area)
IFSM Max. Peak One Cycle Non-Repetitive 120 5ps Sine or Bus Rect. pulse .Follpwing.eny rated
A load condition and
Surge Current * See Fig. 6 30 10ms Sine or 6ms Rect. pulse with rated VRRM applied
EAs Non-Repetitive Avalanche Energy 3.0 mJ Tu = 25 "C, las-- 1A, L= 6mH
|AR Repetitive Avalanche Current 1.0 A
Electrical Specifications
Parameters 10MQ Units Conditions
VFM Max. Forward Voltage Drop (1) 0.54 V @ 1A T - 25 ''C
* See Fig. 1 0.62 v @ 1.5A J
0.49 V @ 1A T, =125 ''C
0.56 V @ 1.5A
I Max. Reverse Leakage Current (1) 0.5 mA T = 25 "C
RM J v,, = rated VR
* See Fig. 2 26 mA T: = 125 ''C
Wro Threshold Voltage 0.36 V TJ = T, max.
rt Forward Slope Resistance 104 mo
c, Typical Junction Capacitance 38 pF VR = 10Voc, T, = 25°C, test signal = 1Mhz
LS Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps
(Rated VR)
(1) Pulse l/With < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 10MQ Units Conditions
T J Max. Junction Temperature Range(*) -55 to 150 "C
Tstg Max. Storage Temperature Range - 55 to 150 "C
RthJA Max. Thermal Resistance Junction 80 °CNV DC operation
to Ambient
wt Approximate Weight 0.07(0.002) g(oz.)
Case Style SMA Similar D-64
Device Marking IRI F
C) dPtot < 1 th I diti f di d it h t . k
dT] Rth(j-a) erma runaway con I Ion ora IO eonl sown ea Sln
