10MQ040 ,SCHOTTKY RECTIFIERapplications requiring low forward drop and very smallfoot prints on PC boards. Typical
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10MQ040NPBF ,SCHOTTKY RECTIFIERBulletin PD-20772 rev. A 07/0410MQ040NPbFSCHOTTKY RECTIFIER 2.1 AmpI = 2.1AmpF(AV)V = 40VRMaj ..
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10MQ040-10MQ040NPBF-10MQ040NTRPBF
SCHOTTKY RECTIFIER
International
IézR Rectifier
Bulletin PD-20772 rev.A 07/04
10MQO40NPbF
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
2.1 Amp
|F(AV) = 2.1Amp
VR = 40V
Description/ Features
. . . The 10MQO40NPbF surface mount Schottky rectifier has been
Characteristics Value U nits designed for applications requiring Iowforward drop and very small
foot prints on PC boards. Typical applications are in disk drives,
IF DC 2A A switching povversupplies, converters, free-wheeling diodes, battery
charging, and reverse battery protection.
VRRM 40 V . Small foot print, surface mountable
o Low forward voltage drop
|FSM @ tp = 5 us sine 120 A . High frequency operation
. Guard ring for enhanced ruggedness and long term
VF @1.5Apk, TJ=125°C 0.56 V reliability
. Lead-Free ("PbF" suffix)
T: range - 55 to 150 ''C
Case Styles
1 0MQ040N PbF
Colhode Anoce
International
1OMQO40NPbF
Bulletin PD-20772 rev. A 07/04 TOR Rectifier
Voltage Ratings
Part number 1OMQO40NPbF
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters 10MQ Units Conditions
IHAV) Max. Average Forward Current 1.5 A 50% duty cycle @ TL = 123 °C, rectangularwave form.
* See Fig. 4 On PC board 9mm2island(.013mmthickcopperpad area)
IFSM Max. Peak One Cycle Non-Repetitive 120 5ps Sine or Bus Rect. pulse Following any rated
A load condition and
Surge Current * See Fig. 6 30 10ms Sine or 6ms Rect. pulse with rated VRRM applied
EAS Non-Repetitive Avalanche Energy 3.0 mJ T, = 25 "C, las =1A,L= 6mH
|AR Repetitive Avalanche Current 1.0 A
Electrical Specifications
Parameters 10MQ Units Conditions
VFM Max. Forward Voltage Drop (1) 0.54 V @ IA T - 25 ''C
* See Fig. 1 0.62 v @ 1.5A J
0.49 V @ IA T, =125 "C
0.56 V @ 1.5A
IRS, Max. Reverse Leakage Current (1) 0.5 mA TJ = 25 "C
. v,, = rated VR
* See Fig. 2 26 mA T: = 125 "C
Wroy Threshold Voltage 0.36 V TJ = T, max.
rt Forward Slope Resistance 104 mo
c, Typical Junction Capacitance 38 pF VR = 1OVDC, T, = 25°C, test signal = 1Mhz
Ls Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps
(Rated VR)
(1) Pulse VWdth < 300ps, Duty Cycle < 2%
ThermaI-Mechanical Specifications
Parameters 10MQ Units Conditions
T J Max.Junction Temperature Range(*) -55 to150 I
Tstg Max. Storage Temperature Range - 55 to 150 r’C
RthJA Max. Thermal Resistance Junction 80 °CNV DC operation
to Ambient
wt Approximate Weight 0.07(0.002) g(oz.)
Case Style SMA Similar D-64
Device Marking IRI F
(*)dPtot < 1
cm Rth(j-a)
thermal runaway condition fora diode on its own heatsink
