10ETS08 ,800V 10A Std. Recovery Diode in a TO-220AC (2-Pin)packageApplications Single-phase Bridge Three-phase Bridge Units= 55°C, T = 125°CCapacitive input filter T ..
10ETS08FP ,800V 10A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)packageApplications Single-phase Bridge Three-phase Bridge UnitsCapacitive input filter T = 55°C, T = 125° ..
10ETS08S ,800V 10A Std. Recovery Diode in a D2-PakpackageApplications Single-phase Bridge Three-phase Bridge UnitsCapacitive input filter T = 55°C, T = 125° ..
10ETS12S ,1200V 10A Std. Recovery Diode in a D2-Pakpackageapplications are in input rectification andthese products are designed to be used withInternational ..
10FWJ2C48M ,SCHOTTKY BARRIER RECTIFIER STACK10FWJ2C48M,U10FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 10FWJ2C48M,U ..
10GL2CZ47A ,HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE10DL2CZ47A,10FL2CZ47A,10GL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE ..
17808 , Three-Terminal Regulator
17808 , Three-Terminal Regulator
17809 , Three-Terminal Regulator
17810 , Three-Terminal Regulator
17812 , Three-Terminal Regulator
17815 , Three-Terminal Regulator
10ETS08
800V 10A Std. Recovery Diode in a TO-220AC (2-Pin)package
International
IéaR Rectifier
Bulletin 12120 rev. A 07/97
SAFEIR Series
10ETS..
INPUT RECTIFIER DIODE
DestrriptionlFeatu res
The 10ETS.. rectmerSAFEtRseries has been
optimized for very low forward voltage drop,
with moderate leakage. The glass passivation
technology used has reliable operation up to
150°Cjunction temperature.
The High Reverse Voltage range available
allows design of input stage primary
rectification with Outstanding Voltage Surge
capability.
Typical applications are in input rectification
and these products are designed to be used
with International Rectifier Switches and
Output Rectifiers which are available in
identical package outlines.
Output Current in Typical Applications
V <1.1V@1OA
IFSM = 200A
vRRM 800 to 1600V
Applications
Single-phase Bridge Three-phase Bridge Units
CapacitiveinputWerTA= 55''C, To-- 125°C
common heatsink of 1 ''C/W
12.0 16.0 A
Major Ratings and Characteristics
Characteristics 10ETS.. Units
IHAV) Sinusoidal waveform 10 A
vRRM 800to 1600 v
G, 200 A
vF @10A,TJ=25°C 1.1 v
T J -40to150 "C
Package Outline
TO-220AC
Also available in D-pak (8EWS Series)
10ETS.. SAFEIR Series
Bulletin l2120 rev. A 07197
International
IEER Rectifier
Voltage Ratings
VRRM , maximum VRSM, maximum non repetitive |RRM
Part Number peak reverse voltage peak reverse voltage 150°C
V V mA
10ETS08 800 900 0.5
1OETS12 1200 1300
10ETS16 1600 1700
Provide terminal coating for voltages above 1200V
Absolute Maximum Ratings
Parameters 10ETS.. Units Conditions
IHAV) Max.AverageForwardCurrent 10 A @TC=105°C,180°conductionhalfsinewave
|FSM Max.PeakOneCycIeNon-Repetitive 170 A 1OmsSinepulse,ratedVRRMapplied
SurgeCurrent 200 10msSine pulse,novoltagereapplied
Ft Max. |2tforfusing 130 A25 10ms Sine pulse, rated vRRM applied
145 10ms Sine pulse, no voltage reapplied
/% Max. i2/ttortusing 1450 Ales t=0.1to10ms,novoltagereapplied
Electrical Specifications
Parameters 10:78.. Units Conditions
VFM Max. Forward Voltage Drop 1.1 V @ 10A,TJ=25°C
rt Forward slope resistance 20 mn
T J = 150°C
VF(T0)Threshold voltage 0.82 V
|RM Max. Reverse Leakage Current 0.05 Tv-- 25''C
mA VR = rated VRRM
0.50 T J = 150 "C
Thermal-Mechanical Specifications
Parameters 10ETS.. Units Conditions
TJ Max. Junction Temperature Range -40to150 (
Tstg Max. Storage Temperature Range -40to150 °C
Rtruc Max. Thermal Resistance Junction 2.5 °CNV DC operation
to Case
R”1JA Max. Thermal Resistance Junction 62 "Ch/V
to Ambient
Rthcs Typical Thermal Resistance, Case to 0.5 "CAN Mounting surface , smooth and greased
Heatsink
M Approximate Weight 2(0.07) g(oz.)
T Mounting Torque Min. 6(5) Kg-cm
Max. 12(10) (Ibf-in)
Case Style TO-220AC
