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10BQ015TR
15V 1A Schottky Discrete Diode in a SMB package
Bulletin PD-2.396 rev.H 03/03
International
IsaR Rectifier 1OBQO15
SCHOTTKY RECTIFIER 1 Amp
Major Ratings and Characteristics Description! Features -
The 1OBQO15 surface mount Schottky rectifier has been
Characteristics 1OBQO15 Units designed for applications requiring low forward drop and very
small foot prints on PC boards. The proprietary barrier
I Rectangular 1.0 A technology allows for reliable operation up to 125°C junction
F(AV) waveform temperature. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes,
VRRM 15 V battery charging, and reverse battery protection.
. . 125°C T operation (V < 5V)
I t =5 ss ne 140 A J R
FSM @ p p I . Optimized for OR-ing applications
VF @1.0Apk, TJ=125°C 0.32 V . Ultra low forward voltage drop
. High frequency operation
o . Guard ring for enhanced ruggedness and long term
T, range - 55 to125 C reliability
. High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Device Marking: IR1C CATHODE ANODE
_ -fCY
2.15 (.085) 3.80 (.150) [ Ci) Ci) ,
1.80 (.071) 3.30 (.130) -
4.70 (.185) Ci) POLARITY Ci) PART NUMBER
4.10 (.161)
2.5 TYP. SOLDERING PAD
-UL" (.098 TYP.)
2.40 (.094) 7
1.90 (.075) 11
0.30 (.012) J; l m
333183111) 0.15 (.006) 2_0 TYP. 1
. _ 5.60 (.220) (.079 TYP.)
5.00 (.197) 4.2 (A65)
4.0 (.157)
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
1
1OBQ015
Bulletin PD-2.396 rev.H 03/03
International
IOR Rectifier
Voltage Ratings
Part number 1OBQ015
VR Max. DC Reverse Voltage (V) 15
VRWM Max. Working Peak Reverse Voltage (V) 25
Absolute Maximum Ratings
Parameters 10BQ Units Conditions
IHAV) Max. Average Forward Current 1.0 A 50% duty cycle @ TL: 84 "C, rectangularwave form.
* See Fig. 5
IFSM Max. Peak One Cycle Non-Repetitive 140 5ps Sine or 3ps Rect. pulse 5olltvving.y.ny rated
A load condition and
Surge Current * See Fig. 7 40 10ms Sine or 6ms Rect. pulse with rated VRRM applied
EAS Non-Repetitive Avalanche Energy 1.0 mJ T, = 25 "C, IAS =1A,L= 2mH
|AR Repetitive Avalanche Current 1.0 A Currentdecayng linearly to zeroin 1 psec
Frequency limited by T: max.VA= 1.5 xVR typical
Electrical Specifications
Parameters 10BQ Units Conditions
Vo, Max. Forward Voltage Drop (1) 0.35 V @ 1.0A T, = 25 ''C
* See Fig. 1 0.44 V @ 2.0A
0.32 V 1.0A
@ T J = 125 "C
0.40 V @ 2.0A
Ira, Max. Reverse Leakage Current (1) 0.5 mA T J = 25 "C
. v,, = rated VR
*See Fig.2 12 mA TJ= 100°C
VHTO) Threshold Voltage - V T J = T J max.
rt Forward Slope Resistance - mn
C T Typical Junction Capacitance 390 pF VR = 5VDC. (test signal range 100KHz to 1MHz) 25''C
L s Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps (Rated VR)
(1) Pulse Width < 300ps, Duty Cycle < 2%
ThermaI-Mechanical Specifications
Parameters 10BQ Units Conditions
T J Max.Junttion Temperature Range (*) -55to125 ''C
Tstg MaxStorage Temperature Range -55to150 "C
R,,, Max.Thermal Resistance 36 ''CAN DC operation(See Fig.4)
Junction to Lead (**)
RthJA Max. Thermal Resistance 80 °C/W DC operation
Junction to Ambient
wt Approximate Weight 0.10(0.003) g(oz.)
Case Style SMB Similarto DO-214AA
Device Marking IR1C
(*) dP_tot < 1 th I diti f di d on its own heatsink
dT] Rth(j-a) erma runawaycon mon ora l0 e
(**) Mounted 1 inch square PCB
