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101XXN/a300avai1 W, 28 V, 500-1200 MHz common base transistor


101 ,1 W, 28 V, 500-1200 MHz common base transistorapplications43 4 3(0.9/1.9GHz), uses a 20 GHz F silicon bipolarTprocess. This IC is a wide range am ..
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101
1 W, 28 V, 500-1200 MHz common base transistor
STB7101
0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER OPERATING FREQUENCY 900-1900MHz OUTPUT POWER 9.8dBm typ. @ 900MHz
7.5dBm typ. @ 1900MHz POWER GAIN GP = 20.3dB typ. @ 900MHz
GP = 20.5dB typ. @ 1900MHz
APPLICATIONS

PA driver for cellular applications
DESCRIPTION

The STB7101, designed for cellular applications
(0.9/1.9GHz), uses a 20 GHz FT silicon bipolar
process. This IC is a wide range amplifier operating
from 900MHz to 1900MHz, in the overall
frequencies range the gain flatness is less than 1
dB. The STB7101 is housed in a very small SMD
package SOT323-6L.
ABSOLUTE MAXIMUM RATINGS
STB7101 ELECTRICAL CHARACTERISTICS (Ta = +25o C, Vcc = 2.75V, ZL = Zs = 50Ω, unless otherwise specified)
TYPICAL EVALUATION CIRCUIT
Evaluation circuit components
STB7101
Insertion Power Gain versus Frequency
Noise Figure versus Frequency
Power Gain versus Output Power @ 1900 MHz
Isolation versus Frequency
Circuit Current versus Supply Voltage
Power Gain versus Output Power @ 900 MHz
TYPICAL PERFORMANCE (Ta = +25 o C, Vcc = 2.75V, unless otherwise specified)
STB7101
SOT323-6L MECHANICAL DATA
STB7101
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