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ZXTP2012ZTA from DIODES

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ZXTP2012ZTA

Manufacturer: DIODES

60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

Partnumber Manufacturer Quantity Availability
ZXTP2012ZTA DIODES 1000 In Stock

Description and Introduction

60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 The **ZXTP2012ZTA** is a PNP transistor manufactured by **DIODES Incorporated**.  

### **Specifications:**  
- **Type:** PNP Bipolar Transistor (BJT)  
- **Package:** SOT-89 (TO-243)  
- **Collector-Base Voltage (VCBO):** -20V  
- **Collector-Emitter Voltage (VCEO):** -12V  
- **Emitter-Base Voltage (VEBO):** -5V  
- **Continuous Collector Current (IC):** -3A  
- **Power Dissipation (PD):** 2W  
- **DC Current Gain (hFE):** 100 (min) @ IC = -1A, VCE = -2V  
- **Transition Frequency (fT):** 100MHz (typical)  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions & Features:**  
- Designed for general-purpose amplification and switching applications.  
- High current gain with low saturation voltage.  
- Suitable for power management in portable electronics.  
- Pb-free and RoHS compliant.  

For detailed electrical characteristics, refer to the official datasheet from **DIODES Incorporated**.

Application Scenarios & Design Considerations

60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

Alternative Part Number

  • BCX69-25 --: PNP transistor in SOT-89 with comparable current gain and voltage ratings, suitable drop-in for many ZXTP2012ZTA applications.
  • 2SB1188 --: PNP power transistor in SOT-89 package with similar Vceo and current capability, widely available alternative.
  • FZT751 --: PNP medium-power transistor in SOT-223 with comparable voltage and current ratings, usable where slightly larger package is acceptable.

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