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ZVP2110

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Partnumber Manufacturer Quantity Availability
ZVP2110 226 In Stock

Description and Introduction

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET The part **ZVP2110** is a **P-channel enhancement mode MOSFET** manufactured by **Diodes Incorporated**.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** -100V  
- **Continuous Drain Current (ID):** -0.18A  
- **Power Dissipation (PD):** 350mW  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 25Ω (max) at VGS = -10V  
- **Threshold Voltage (VGS(th)):** -1V to -3V  

### **Description & Features:**  
- Designed for **low-power switching applications**.  
- **Enhancement mode** operation.  
- **SOT-23 package** (3-pin).  
- **Low gate charge** for fast switching.  
- **Low leakage current** for improved efficiency.  

This MOSFET is commonly used in **battery-powered circuits, load switching, and signal amplification**.

Application Scenarios & Design Considerations

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Alternative Part Number

  • BSS138 --: N-channel MOSFET in SOT-23 commonly used as a general-purpose small-signal switch; verify polarity and voltage ratings against the original P-channel device before substitution.
  • 2N7002 --: Widely available small-signal MOSFET in SOT-23 with similar low-current switching role; check Vds and threshold compatibility.
  • BS250 --: P-channel small-signal MOSFET in TO-92 that matches the P-channel nature of the original and is suitable for low-voltage switching applications.

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