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WFU1N60

Silicon N-Channel MOSFET

Partnumber Manufacturer Quantity Availability
WFU1N60 640 In Stock

Description and Introduction

Silicon N-Channel MOSFET The WFU1N60 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by **Wuxi Fuman Electronics**. Below are its key specifications, descriptions, and features:

### **Manufacturer:**  
Wuxi Fuman Electronics  

### **Part Number:**  
WFU1N60  

### **Type:**  
N-Channel MOSFET  

### **Voltage Ratings:**  
- **Drain-Source Voltage (VDSS):** 600V  
- **Gate-Source Voltage (VGS):** ±30V  

### **Current Ratings:**  
- **Continuous Drain Current (ID):** 1A  
- **Pulsed Drain Current (IDM):** 4A  

### **Power Dissipation:**  
- **Maximum Power Dissipation (PD):** 25W (at 25°C)  

### **On-Resistance:**  
- **Drain-Source On-Resistance (RDS(on)):** 10Ω (max) at VGS = 10V  

### **Switching Characteristics:**  
- **Input Capacitance (Ciss):** 45pF (typical)  
- **Output Capacitance (Coss):** 10pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 5pF (typical)  

### **Operating Temperature Range:**  
- **-55°C to +150°C**  

### **Package:**  
- **TO-252 (DPAK)**  

### **Features:**  
- **High voltage capability (600V)**  
- **Low gate charge**  
- **Fast switching speed**  
- **Avalanche energy specified**  
- **Lead-free and RoHS compliant**  

### **Applications:**  
- **Switching power supplies**  
- **DC-DC converters**  
- **LED drivers**  
- **Motor control circuits**  

This information is based on the manufacturer's datasheet for the WFU1N60 MOSFET.

Partnumber Manufacturer Quantity Availability
WFU1N60 WISDOM 6300 In Stock

Description and Introduction

Silicon N-Channel MOSFET The WFU1N60 is a MOSFET manufactured by WISDOM. Below are the specifications, descriptions, and features based on the available knowledge:

### **Specifications:**
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** 600V  
- **Continuous Drain Current (ID):** 1A  
- **Pulsed Drain Current (IDM):** 4A  
- **Power Dissipation (PD):** 25W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 10Ω (typical)  
- **Threshold Voltage (VGS(th)):** 3V (typical)  
- **Input Capacitance (Ciss):** 30pF (typical)  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions:**
- The WFU1N60 is a high-voltage N-channel MOSFET designed for switching applications.  
- It is suitable for power management, inverters, and other high-voltage circuits.  

### **Features:**
- Low on-resistance for efficient power handling.  
- Fast switching speed.  
- High voltage capability (600V).  
- Robust and reliable performance in high-temperature environments.  

For exact details, refer to the official WISDOM datasheet.

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