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TPD4102K

Intelligent Power Device High Voltage Monolithic Silicon Power IC

Partnumber Manufacturer Quantity Availability
TPD4102K 100 In Stock

Description and Introduction

Intelligent Power Device High Voltage Monolithic Silicon Power IC The TPD4102K is a power MOSFET transistor manufactured by Toshiba. Below are the factual details from Ic-phoenix technical data files:

### **Manufacturer:**  
- **Toshiba**  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 30A  
- **Pulsed Drain Current (IDM):** 120A  
- **Power Dissipation (PD):** 100W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.04Ω (max) at VGS = 10V  
- **Input Capacitance (Ciss):** 1800pF (typical)  
- **Package:** TO-220  

### **Descriptions and Features:**  
- Designed for high-power switching applications.  
- Low on-resistance for improved efficiency.  
- Fast switching speed.  
- Suitable for power supplies, motor control, and DC-DC converters.  
- Includes built-in protection against overcurrent and thermal runaway.  

This information is based solely on the manufacturer's datasheet and specifications.

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