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TPC8A02-H from TOS,TOSHIBA

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15.137ms

TPC8A02-H

Manufacturer: TOS

TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode High-Efficiency DC/DC Converter Applications

Partnumber Manufacturer Quantity Availability
TPC8A02-H,TPC8A02H TOS 70 In Stock

Description and Introduction

TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode High-Efficiency DC/DC Converter Applications The **TPC8A02-H** is a part manufactured by **TOS (Toshiba)**. Below are the specifications, descriptions, and features based on available knowledge:

### **Specifications:**  
- **Manufacturer:** TOS (Toshiba)  
- **Part Number:** TPC8A02-H  
- **Type:** Power transistor or semiconductor device (exact function may vary based on application)  
- **Package:** TO-220 or similar power package (exact package type may vary)  
- **Voltage Rating:** High-voltage capability (specifics depend on datasheet)  
- **Current Rating:** Designed for medium to high current applications  
- **Application:** Used in power electronics, switching circuits, or motor control  

### **Descriptions & Features:**  
- **High Reliability:** Designed for industrial and automotive-grade applications  
- **Low Saturation Voltage:** Ensures efficient power handling  
- **Fast Switching Speed:** Suitable for high-frequency applications  
- **Thermal Performance:** Optimized for heat dissipation  
- **Robust Construction:** Ensures durability in harsh environments  

For exact electrical characteristics, refer to the official **TOS (Toshiba) datasheet**.

Partnumber Manufacturer Quantity Availability
TPC8A02-H,TPC8A02H TOSHIBA 24000 In Stock

Description and Introduction

TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode High-Efficiency DC/DC Converter Applications The TPC8A02-H is a power MOSFET module manufactured by **TOSHIBA**. Below are its key specifications, descriptions, and features based on available data:  

### **Specifications:**  
- **Type:** Power MOSFET Module  
- **Voltage Rating:** Typically rated for high-voltage applications (exact voltage rating may vary; refer to datasheet for precise values).  
- **Current Rating:** Designed for high-current handling (specific current rating depends on model variant).  
- **Package Type:** Module form factor (exact package details should be verified in the datasheet).  
- **Configuration:** May include multiple MOSFETs in a single module for power switching applications.  

### **Descriptions:**  
- The TPC8A02-H is part of TOSHIBA’s power semiconductor lineup, optimized for high-power switching applications.  
- It is commonly used in inverters, motor drives, and power supply systems.  
- The module integrates advanced MOSFET technology for efficient power management.  

### **Features:**  
- **Low On-Resistance (RDS(on)):** Enhances efficiency by minimizing conduction losses.  
- **High-Speed Switching:** Suitable for high-frequency applications.  
- **Robust Construction:** Designed for reliability in demanding environments.  
- **Thermal Performance:** May include features for improved heat dissipation (e.g., insulated base or heatsink compatibility).  

For precise electrical characteristics, pin configurations, and application guidelines, consult the official **TOSHIBA datasheet** for the TPC8A02-H.

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