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TP2535N3 from SUPERTEX

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TP2535N3

Manufacturer: SUPERTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

Partnumber Manufacturer Quantity Availability
TP2535N3 SUPERTEX 3183 In Stock

Description and Introduction

P-Channel Enhancement-Mode Vertical DMOS FETs The part **TP2535N3** is manufactured by **SUPERTEX**.  

### **Specifications:**  
- **Type:** High Voltage N-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** 350V  
- **Continuous Drain Current (ID):** 0.25A  
- **Power Dissipation (PD):** 1.25W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 35Ω (max)  
- **Threshold Voltage (VGS(th)):** 1.5V (min), 3.0V (max)  
- **Package:** TO-92  

### **Descriptions & Features:**  
- Designed for high-voltage switching applications.  
- Low threshold voltage for ease of drive.  
- Suitable for low-power, high-voltage circuits.  
- Commonly used in telecommunication, industrial, and consumer electronics.  

For detailed datasheet information, refer to the official SUPERTEX documentation.

Application Scenarios & Design Considerations

P-Channel Enhancement-Mode Vertical DMOS FETs

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