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TK5P50D from TOS,TOSHIBA

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TK5P50D

Manufacturer: TOS, Toshiba

Power MOSFET (N-ch 250V<VDSS≤500V)

Partnumber Manufacturer Quantity Availability
TK5P50D TOS, Toshiba 30149 In Stock

Description and Introduction

Power MOSFET (N-ch 250V<VDSS≤500V) The TK5P50D is a P-channel MOSFET manufactured by Toshiba. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Type:** P-channel MOSFET  
- **Drain-Source Voltage (VDSS):** -50V  
- **Gate-Source Voltage (VGSS):** ±20V  
- **Drain Current (ID):** -5.0A (continuous)  
- **Power Dissipation (PD):** 30W (at 25°C)  
- **On-Resistance (RDS(ON)):** 0.5Ω (max) at VGS = -10V, ID = -2.5A  
- **Gate Threshold Voltage (VGS(th)):** -1.0V to -3.0V  
- **Input Capacitance (Ciss):** 300pF (typical)  
- **Operating Temperature Range (Tj):** -55°C to +150°C  

### **Descriptions:**  
- The TK5P50D is designed for power switching applications.  
- It features low on-resistance and fast switching performance.  
- Suitable for DC-DC converters, motor control, and other power management applications.  

### **Features:**  
- Low on-resistance (RDS(ON)) for reduced conduction losses.  
- Fast switching capability for efficient power control.  
- Compact and reliable package (TO-220F).  
- Suitable for high-efficiency power applications.  

This information is based on Toshiba's official datasheet for the TK5P50D.

Application Scenarios & Design Considerations

Power MOSFET (N-ch 250V<VDSS≤500V)

Alternative Part Number

  • STP5NK50ZFP --: N-channel 500V MOSFET in TO-220FP with similar RDS(on) and current rating, direct functional substitute.
  • IRFIBE30G --: 500V N-channel MOSFET in TO-220FP package with comparable on-resistance and power handling.
  • FQP5N50C --: 500V 5A N-channel MOSFET with similar switching characteristics, suitable replacement in most circuits.
  • IRF830 --: Widely available 500V N-channel MOSFET in TO-220, comparable voltage and current class, suitable substitute with minor gate charge differences.

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