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TIP147 from ST,ST Microelectronics

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TIP147

Manufacturer: ST

Leaded Power Transistor Darlington

Partnumber Manufacturer Quantity Availability
TIP147 ST 10000 In Stock

Description and Introduction

Leaded Power Transistor Darlington The TIP147 is a PNP Darlington transistor manufactured by STMicroelectronics. Below are its specifications, descriptions, and features based on factual data from Ic-phoenix technical data files:

### **Specifications:**
- **Transistor Type:** PNP Darlington  
- **Collector-Emitter Voltage (VCE):** -100V  
- **Collector-Base Voltage (VCB):** -100V  
- **Emitter-Base Voltage (VEB):** -5V  
- **Continuous Collector Current (IC):** -10A  
- **Peak Collector Current (ICM):** -15A  
- **Power Dissipation (Ptot):** 80W  
- **DC Current Gain (hFE):** 1000 (min) at IC = -4A, VCE = -4V  
- **Operating Junction Temperature (Tj):** -65°C to +150°C  
- **Storage Temperature Range (Tstg):** -65°C to +150°C  

### **Description:**
The TIP147 is a high-power PNP Darlington transistor designed for general-purpose amplification and switching applications. It features a high current gain, making it suitable for driving high-current loads with minimal base current. The device is housed in a TO-220 package, which provides efficient thermal dissipation.

### **Features:**
- **High current gain (hFE ≥ 1000)**  
- **Low saturation voltage (VCE(sat))**  
- **High collector current capability (up to -10A continuous, -15A peak)**  
- **TO-220 package for easy mounting and heat dissipation**  
- **Suitable for power amplification and switching applications**  

This information is based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

Leaded Power Transistor Darlington

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