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SIHG20N50C-E3 from VISHAY

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SIHG20N50C-E3

Manufacturer: VISHAY, TO-247

Power MOSFET
Partnumber Manufacturer Quantity Availability
SIHG20N50C-E3,SIHG20N50CE3 VISHAY, TO-247 91458 In Stock

Description and Introduction

Power MOSFET The **SIHG20N50C-E3** is a power MOSFET manufactured by **VISHAY**. Below are its specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** VISHAY  
- **Part Number:** SIHG20N50C-E3  
- **Transistor Type:** N-Channel  
- **Technology:** MOSFET  
- **Drain-Source Voltage (VDSS):** 500V  
- **Continuous Drain Current (ID):** 20A  
- **Pulsed Drain Current (IDM):** 80A  
- **Power Dissipation (PD):** 330W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 0.25Ω (max) @ VGS = 10V  
- **Threshold Voltage (VGS(th)):** 4V (min) - 5V (max)  
- **Input Capacitance (Ciss):** 1700pF (typ)  
- **Output Capacitance (Coss):** 300pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 30pF (typ)  
- **Turn-On Delay Time (td(on)):** 15ns (typ)  
- **Rise Time (tr):** 35ns (typ)  
- **Turn-Off Delay Time (td(off)):** 60ns (typ)  
- **Fall Time (tf):** 25ns (typ)  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** TO-247AC  

### **Descriptions:**  
The **SIHG20N50C-E3** is a high-voltage N-Channel MOSFET designed for power switching applications. It offers low on-resistance, high-speed switching, and robust performance in high-voltage circuits.  

### **Features:**  
- **High Voltage Capability (500V)**  
- **Low On-Resistance (0.25Ω max @ VGS = 10V)**  
- **Fast Switching Performance**  
- **High Power Dissipation (330W)**  
- **Avalanche Energy Specified**  
- **Improved dv/dt Capability**  
- **TO-247AC Package for Enhanced Thermal Performance**  

This information is strictly based on the manufacturer's datasheet and does not include any additional recommendations or usage guidance.

Application Scenarios & Design Considerations

Power MOSFET

Alternative Part Number

  • STP20N50K5 --: 500V N-channel MOSFET with comparable RDS(on) and current rating, suitable drop-in replacement for switching and power supply designs.
  • FDP20N50 --: 500V N-channel MOSFET in TO-220 with similar on-resistance and current capability, widely available and cost effective.
  • IRFB20N50K --: 500V N-channel MOSFET with matching voltage and current class, good alternative for high-voltage switching applications.
  • IRFP460 --: 500V 20A N-channel MOSFET in TO-247, very close voltage and current ratings to the original, widely available and commonly used as a drop-in replacement.
  • STW20NM50 --: 500V 20A N-channel MOSFET in TO-247 package with comparable RDS(on) and gate charge, suitable direct substitute for switching applications.
  • FQA19N50C --: 500V 19A N-channel MOSFET in TO-247, slightly lower current but similar ratings and pinout, a practical alternative when the original is unavailable.

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