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SI5913DC-T1-E3 from VISHAY

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SI5913DC-T1-E3

Manufacturer: VISHAY

P-Channel 20-V (D-S) MOSFET with Schottky Diode

Partnumber Manufacturer Quantity Availability
SI5913DC-T1-E3,SI5913DCT1E3 VISHAY 2880 In Stock

Description and Introduction

P-Channel 20-V (D-S) MOSFET with Schottky Diode The SI5913DC-T1-E3 is a P-channel MOSFET manufactured by Vishay.  

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Part Number:** SI5913DC-T1-E3  
- **Channel Type:** P-Channel  
- **Drain-Source Voltage (VDSS):** -30V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Continuous Drain Current (ID):** -5.8A  
- **RDS(ON) (Max) @ VGS = -10V:** 0.045Ω  
- **Power Dissipation (PD):** 2.5W  
- **Package:** PowerPAK® SO-8  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions and Features:**  
- Designed for high-efficiency power management applications.  
- Low on-resistance (RDS(ON)) for reduced conduction losses.  
- Optimized for switching applications.  
- Lead (Pb)-free and RoHS compliant.  
- Suitable for load switching, power management, and DC-DC conversion.  

For detailed electrical characteristics, refer to the official Vishay datasheet.

Application Scenarios & Design Considerations

P-Channel 20-V (D-S) MOSFET with Schottky Diode

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