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SI3430DV from VISHAY

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SI3430DV

Manufacturer: VISHAY

N-Channel 100-V (D-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI3430DV VISHAY 10000 In Stock

Description and Introduction

N-Channel 100-V (D-S) MOSFET The SI3430DV is a P-channel MOSFET manufactured by Vishay. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**
- **Manufacturer:** Vishay  
- **Part Number:** SI3430DV  
- **Type:** P-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** -30V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Continuous Drain Current (ID):** -5.7A  
- **Pulsed Drain Current (IDM):** -20A  
- **Power Dissipation (PD):** 2.5W  
- **On-Resistance (RDS(on)):** 85mΩ (max) at VGS = -10V  
- **Threshold Voltage (VGS(th)):** -1V to -3V  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** PowerPAK® SO-8  

### **Description:**  
The SI3430DV is a P-channel MOSFET designed for high-efficiency power management applications. It features low on-resistance and fast switching performance, making it suitable for load switching, DC-DC conversion, and battery management systems.  

### **Features:**  
- Low on-resistance (RDS(on)) for reduced conduction losses  
- High current handling capability  
- Fast switching speed  
- Optimized for power-saving applications  
- PowerPAK® SO-8 package for improved thermal performance  
- RoHS compliant  

This information is strictly based on the manufacturer's datasheet and specifications.

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