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SUP75N03-07 from SILICON

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SUP75N03-07

Manufacturer: SILICON

N-Channel 30-V (D-S) 175 MOSFET

Partnumber Manufacturer Quantity Availability
SUP75N03-07,SUP75N0307 SILICON 300 In Stock

Description and Introduction

N-Channel 30-V (D-S) 175 MOSFET The SUP75N03-07 is a power MOSFET manufactured by SILICON. Below are its specifications, descriptions, and features based on factual information:  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 75A  
- **Pulsed Drain Current (IDM):** 300A  
- **Power Dissipation (PD):** 200W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 7mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Total Gate Charge (Qg):** 100nC (typ)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Description:**  
The SUP75N03-07 is an N-channel MOSFET designed for high-power switching applications. It offers low on-resistance and high current handling, making it suitable for power management in automotive, industrial, and consumer electronics.  

### **Features:**  
- Low RDS(on) for reduced conduction losses  
- High current capability  
- Fast switching performance  
- Enhanced thermal characteristics  
- Avalanche energy rated  
- TO-220 package for efficient heat dissipation  

This information is based on the manufacturer's datasheet. For detailed performance curves and application notes, refer to the official documentation.

Application Scenarios & Design Considerations

N-Channel 30-V (D-S) 175 MOSFET

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