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IRF3205 from HARRIS,Intersil

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IRF3205

Manufacturer: HARRIS

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF3205 HARRIS 78 In Stock

Description and Introduction

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF3205 is a power MOSFET manufactured by Harris Semiconductor (now part of Littelfuse). Below are its key specifications, descriptions, and features based on factual information:

### **Specifications:**
- **Drain-Source Voltage (VDSS):** 55V  
- **Continuous Drain Current (ID):** 110A (at 25°C)  
- **Pulsed Drain Current (IDM):** 390A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **On-Resistance (RDS(on)):** 8.0mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2.0V to 4.0V  
- **Input Capacitance (Ciss):** 1800pF (typical)  
- **Output Capacitance (Coss):** 520pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 160pF (typical)  
- **Turn-On Delay Time (td(on)):** 13ns (typical)  
- **Turn-Off Delay Time (td(off)):** 44ns (typical)  
- **Operating Temperature Range:** -55°C to +175°C  

### **Description:**  
The IRF3205 is an N-channel power MOSFET designed for high-current, high-efficiency switching applications. It features low on-resistance and fast switching speeds, making it suitable for power supplies, motor control, and DC-DC converters.

### **Features:**  
- **Low On-Resistance:** Minimizes conduction losses.  
- **Fast Switching:** Enhances efficiency in high-frequency applications.  
- **High Current Handling:** Supports up to 110A continuous drain current.  
- **Avalanche Energy Rated:** Improves reliability in rugged environments.  
- **TO-220 Package:** Provides efficient thermal dissipation.  

This information is based solely on the manufacturer's datasheet.

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