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STW7NC80Z from ST,ST Microelectronics

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STW7NC80Z

Manufacturer: ST

N-CHANNEL 800V 1.5OHM 6A TO-247 ZENER-PROTECTED POWERMESH MOSFET

Partnumber Manufacturer Quantity Availability
STW7NC80Z ST 180 In Stock

Description and Introduction

N-CHANNEL 800V 1.5OHM 6A TO-247 ZENER-PROTECTED POWERMESH MOSFET The STW7NC80Z is a power MOSFET manufactured by STMicroelectronics. Below are the factual details from Ic-phoenix technical data files:  

### **Manufacturer:**  
STMicroelectronics  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 800V  
- **Continuous Drain Current (ID):** 7A  
- **Pulsed Drain Current (IDM):** 28A  
- **Power Dissipation (PD):** 190W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 1.2Ω (max) at VGS = 10V  
- **Total Gate Charge (Qg):** 18nC (typical)  
- **Input Capacitance (Ciss):** 600pF (typical)  
- **Output Capacitance (Coss):** 100pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 20pF (typical)  
- **Turn-On Delay Time (td(on)):** 10ns (typical)  
- **Turn-Off Delay Time (td(off)):** 50ns (typical)  
- **Operating Junction Temperature (TJ):** -55°C to 150°C  

### **Description:**  
The STW7NC80Z is an N-channel 800V power MOSFET designed for high-voltage, high-speed switching applications. It is optimized for low gate charge and low on-resistance, making it suitable for power supplies, motor control, and lighting applications.  

### **Features:**  
- **High Voltage Capability:** 800V breakdown voltage  
- **Low Gate Charge:** Enhances switching efficiency  
- **Low On-Resistance:** Reduces conduction losses  
- **Fast Switching Speed:** Suitable for high-frequency applications  
- **Avalanche Ruggedness:** Ensures reliability in harsh conditions  
- **TO-247 Package:** Provides good thermal performance  

This information is based solely on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

N-CHANNEL 800V 1.5OHM 6A TO-247 ZENER-PROTECTED POWERMESH MOSFET

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