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STTH812DI from ST,ST Microelectronics

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STTH812DI

Manufacturer: ST

Ultrafast recovery -1200 V diode

Partnumber Manufacturer Quantity Availability
STTH812DI ST 10 In Stock

Description and Introduction

Ultrafast recovery -1200 V diode The **STTH812DI** is a high-efficiency **dual ultrafast diode** manufactured by **STMicroelectronics**.  

### **Key Specifications:**  
- **Type:** Dual ultrafast recovery diode  
- **Configuration:** Common cathode  
- **Voltage Rating (VRRM):** 1200 V  
- **Average Forward Current (IF(AV)):** 8 A (per diode)  
- **Peak Forward Surge Current (IFSM):** 80 A (non-repetitive)  
- **Forward Voltage Drop (VF):** 1.7 V (typical at 8 A)  
- **Reverse Recovery Time (trr):** 35 ns (typical)  
- **Operating Junction Temperature (Tj):** -40°C to +150°C  
- **Package:** TO-220AB (isolated tab)  

### **Features:**  
- **Ultrafast recovery time** for high-frequency applications  
- **Low forward voltage drop** for reduced power losses  
- **High surge current capability**  
- **Isolated mounting tab** for simplified thermal management  
- **AEC-Q101 qualified** for automotive applications  

### **Applications:**  
- Power factor correction (PFC) circuits  
- Switch-mode power supplies (SMPS)  
- Motor control inverters  
- Freewheeling and clamping diodes  
- Automotive systems  

This diode is designed for high-efficiency, high-reliability applications in power electronics.

Application Scenarios & Design Considerations

Ultrafast recovery -1200 V diode

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