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STS2DNE60 from ST,ST Microelectronics

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STS2DNE60

Manufacturer: ST

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Partnumber Manufacturer Quantity Availability
STS2DNE60 ST 5159 In Stock

Description and Introduction

N The **STS2DNE60** is a Schottky diode manufactured by **STMicroelectronics (ST)**. Below are its specifications, descriptions, and features based on the available knowledge:  

### **Specifications:**  
- **Type:** Schottky Diode  
- **Maximum Average Forward Current (IF(AV)):** 2A  
- **Peak Forward Surge Current (IFSM):** 50A (non-repetitive)  
- **Maximum Reverse Voltage (VRRM):** 60V  
- **Forward Voltage Drop (VF):** Typically 0.55V at 2A  
- **Reverse Leakage Current (IR):** Typically 0.5mA at 60V  
- **Operating Junction Temperature (Tj):** -65°C to +150°C  
- **Storage Temperature (Tstg):** -65°C to +150°C  

### **Descriptions:**  
- Designed for **high-efficiency rectification** in power supplies and converters.  
- **Low forward voltage drop** ensures minimal power loss.  
- **Fast switching** capability, making it suitable for high-frequency applications.  
- **Plastic package** ensures reliability and ease of PCB mounting.  

### **Features:**  
- **Schottky barrier technology** for improved efficiency.  
- **Low thermal resistance** for better heat dissipation.  
- **High surge current capability** for robust performance.  
- **RoHS compliant** and lead-free, meeting environmental standards.  

This diode is commonly used in **switching power supplies, DC-DC converters, freewheeling diodes, and reverse polarity protection circuits**.  

Would you like any additional technical details?

Application Scenarios & Design Considerations

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Alternative Part Number

  • FDS4935A --: Dual N-channel MOSFET in SO-8 with comparable 60V rating and low on-resistance, suitable drop-in replacement for the STS2DNE60 dual MOSFET.
  • IRF7341 --: Dual N-channel 60V MOSFET in SO-8 package with similar current and RDS(on) characteristics, widely available alternative.
  • SI4936DY --: Dual N-channel 60V MOSFET in SO-8 with comparable electrical ratings, good cross-reference for the STS2DNE60.
  • FDS4935B --: Dual P-channel MOSFET in SO-8 with comparable voltage and current ratings, suitable for similar load-switch and power-management applications.
  • IRF7329 --: Dual P-channel MOSFET in SO-8 offering similar RDS(on) and current capability, a common cross-reference for dual P-channel power switching.
  • Si4935DY --: Dual P-channel MOSFET in SO-8 with matching package and comparable electrical characteristics, usable as a drop-in alternative in most circuits.

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